BF1105WR NXP Semiconductors, BF1105WR Datasheet - Page 3

• Manufacturer Part Number: BF1105WR
• Description: Enhancement type N-channel Field-Effect Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
1997 Dec 02
handbook, halfpage
V
I
I
I
P
T
T
SYMBOL
D
G1
G2
stg
j
DS
tot
N-channel dual-gate MOS-FETs
(mW)
P tot
250
200
150
100
50
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
Fig.4 Power derating curve.
40
PARAMETER
80
120
T amb (°C)
MGM243
160
T
amb
 80 C; note 1; see Fig.4
3
CONDITIONS
BF1105; BF1105R; BF1105WR





65

MIN.
7
30
10
10
200
+150
+150
Product specification
MAX.
V
mA
mA
mA
mW
C
C
UNIT