BLF7G27L-90P NXP Semiconductors, BLF7G27L-90P Datasheet - Page 3

• Manufacturer Part Number: BLF7G27L-90P
• Description: 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G27L-90P_BLF7G27LS-90P
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
T
The BLF7G27L-90P and BLF7G27LS-90P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
G
RL

ACPR
DSS
DSX
GSS
j
case
DS
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-c)
DS(on)
p
= 25
in
= 28 V; I
= 25
885k

C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V

Parameter
thermal resistance from junction to case
C; 2 sections combined unless otherwise specified; in a class-AB production test circuit.
Thermal characteristics
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Dq
1
All information provided in this document is subject to legal disclaimers.
= 720 mA; P
= 2500 MHz; f
BLF7G27L-90P; BLF7G27LS-90P
Rev. 2 — 10 November 2011
L
2
= 90 W (CW); f = 2500 MHz.
= 2700 MHz; RF performance at V
Conditions
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 2100 mA
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
Conditions
T
D
Conditions
P
P
P
P
DS
case
D
D
= 0.6 mA
L(AV)
L(AV)
L(AV)
L(AV)
+ 3.75 V;
DS
+ 3.75 V;
= 60 mA
= 60 mA
= 28 V
= 0 V
= 80 C; P
= 16 W
= 16 W
= 16 W
= 16 W
DS
Power LDMOS transistor
= 28 V; I
Min
65
1.5
-
9.6
-
-
-
L
= 16 W
Min Typ Max Unit
-
17
-
25
-
© NXP B.V. 2011. All rights reserved.
Typ
-
1.8
-
11.5
-
0.53
0.24
Dq
16
18.5 -
15 -
29
46 41
= 720 mA;
-
2.3
Max
1.4
-
150
-
-
Typ
0.4
-
-
3 of 14
Unit
K/W
W
dB
dB
%
dBc
Unit
V
V
A
A
nA
S
