BLF6G13L-250P NXP Semiconductors, BLF6G13L-250P Datasheet - Page 2

• Manufacturer Part Number: BLF6G13L-250P
• Description: 250 W LDMOS power transistor intended for CW applications at a frequency of 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G13L-250P_6G13LS-250P
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G13L-250P (SOT1121A)
1
2
3
4
5
BLF6G13LS-250P (SOT1121B)
1
2
3
4
5
Type number
BLF6G13L-250P
BLF6G13LS-250P
Symbol
V
I
T
V
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
BLF6G13L-250P; BLF6G13LS-250P
All information provided in this document is subject to legal disclaimers.
-
-
Package
Name
Rev. 3 — 14 October 2011
flanged LDMOST ceramic package; 2 mounting
earless flanged LDMOST ceramic package; 4 leads
Description
holes; 4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
-
Min
-
0.5
-
65
© NXP B.V. 2011. All rights reserved.
3
4
3
4
Max
100
+13
42
+150
200
Version
SOT1121A
SOT1121B
1
2
1
2
sym117
sym117
2 of 14
5
5
Unit
V
V
A
C
C