BLF244 NXP Semiconductors, BLF244 Datasheet - Page 5

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range

BLF244

Manufacturer Part Number
BLF244
Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
2003 Oct 13
handbook, halfpage
handbook, halfpage
VHF power MOS transistor
V
Fig.4
V
Fig.6
(mV/K)
R DS(on)
T.C.
DS
GS
( )
= 10 V; valid for T
= 10 V; I
2
0
2
4
6
8
1
2
1
0
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Drain-source on-state resistance as a
function of junction temperature, typical
values.
0
D
= 0.75 A.
j
40
= 25 to 125 C.
10
80
10
2
I D (mA)
120
T j ( C)
MGP152
MGP154
10
160
3
5
handbook, halfpage
handbook, halfpage
V
solid line: T
dotted line: T
Fig.5
V
Fig.7
DS
GS
(pF)
(A)
160
120
I D
C
= 10 V.
= 0; f = 1 MHz.
80
40
6
4
2
0
0
0
0
Drain current as a function of gate-source
voltage, typical values.
Input and output capacitance as functions
of drain-source voltage, typical values.
j
= 25 C.
j
= 125 C.
10
4
20
8
C os
C is
Product specification
12
30
V GS (V)
V DS (V)
BLF244
MGP153
MGP155
16
40

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