BLD6G21L-50 NXP Semiconductors, BLD6G21L-50 Datasheet - Page 5

• Manufacturer Part Number: BLD6G21L-50
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLD6G21L-50_BLD6G21LS-50
Product data sheet
Fig 3.
(dB)
G
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
p
17
15
13
11
30
V
f = 2017.5 MHz; δ = 10 %; t
Power gain as a function of load power;
typical values
DS
GS(amp)peak
GS(amp)peak
GS(amp)peak
GS(amp)peak
GS(amp)peak
GS(amp)peak
= 28 V; I
8.3.1 CW pulsed
8.3 Performance curves
35
= 0 V
= 0.2 V
= 0.4 V
= 0.5 V
= 0.6 V
= 0.8 V
Dq
= 170 mA (main); T
Performance curves are measured in a BLD6G21L-50 application circuit.
Fig 2.
(6)
(5)
(4)
(3)
(2)
(1)
40
p
Definition of transistor impedance
= 100 μs on 1 ms period.
45
case
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
P
All information provided in this document is subject to legal disclaimers.
001aam428
L
(dBm)
= 25 °C;
50
Rev. 2 — 17 August 2010
BLD6G21L-50; BLD6G21LS-50
Fig 4.
gate
Z
(%)
S
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
D
60
40
20
0
30
V
f = 2017.5 MHz; δ = 10 %; t
Drain efficiency as a function of load power;
typical values
DS
GS(amp)peak
GS(amp)peak
GS(amp)peak
GS(amp)peak
GS(amp)peak
GS(amp)peak
= 28 V; I
001aaf059
Z
drain
L
35
= 0 V
= 0.2 V
= 0.4 V
= 0.5 V
= 0.6 V
= 0.8 V
Dq
= 170 mA (main); T
40
p
= 100 μs on 1 ms period.
45
© NXP B.V. 2010. All rights reserved.
case
P
(1)
(2)
(3)
(4)
(5)
(6)
001aam429
L
(dBm)
= 25 °C;
50
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