BSP225 NXP Semiconductors, BSP225 Datasheet

Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology

BSP225

Manufacturer Part Number
BSP225
Description
Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Product specification
File under Discrete Semiconductors, SC13b
DATA SHEET
BSP225
P-channel enhancement mode
vertical D-MOS transistor
DISCRETE SEMICONDUCTORS
April 1995

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BSP225 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BSP225 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 ...

Page 2

... PARAMETER V drain-source voltage DS I drain current D R drain-source on-resistance DS(on) V gate-source threshold voltage GS(th) PIN CONFIGURATION handbook, halfpage 1 2 Top view Fig.1 Simplified outline and symbol. 2 Product specification BSP225 CONDITIONS MAX. 250 DC value 225 I = 200 2 ...

Page 3

... Note 1. Device mounted on an epoxy printed-circuit board 1.5 mm, mounting pad for the drain lead minimum 6 cm April 1995 CONDITIONS open drain DC value peak value (note 1) amb PARAMETER 3 Product specification BSP225 MIN. MAX. UNIT 250 225 mA 600 mA 1.5 ...

Page 4

... MHz MHz MHz I = 250 250 BSP225 100 nA 2 ...

Page 5

... OUTPUT MBB689 MBB693 handbook, halfpage I D (A) 0.8 0.6 0.4 0.2 150 200 T amb ( C) Fig.5 Typical output characteristics Product specification off Fig.3 Input and output waveforms BSP225 10 % MBB690 MDA706 ( ...

Page 6

... Fig.7 Typical on-resistance as a function of drain current DS(on) 2 1 100 Fig.9 Temperature coefficient of drain-source on-resistance ---------------------------------------------- ; typical R at 200 mA DS(on) BSP225 MDA708 DSon ( ) = f MDA710 150 ...

Page 7

... Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 1.1 handbook, halfpage k 1 0.9 0.8 0 Fig.10 Temperature coefficient of gate-source threshold voltage – ----------------------------------------------- - ; – typical mA. GS(th) April 1995 MDA711 100 150 Product specification BSP225 ...

Page 8

... VERSION IEC SOT223 April 1995 scale 0.32 6.7 3.7 7.3 4.6 2.3 0.22 6.3 3.3 6.7 REFERENCES JEDEC EIAJ 8 Product specification detail 1.1 0.95 0.2 0.1 0.1 0.7 0.85 EUROPEAN PROJECTION BSP225 SOT223 ISSUE DATE 96-11-11 97-02-28 ...

Page 9

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 9 Product specification BSP225 ...

Page 10

... Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor April 1995 NOTES 10 Product specification BSP225 ...

Page 11

... Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor April 1995 NOTES 11 Product specification BSP225 ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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