BUK92150-55A NXP Semiconductors, BUK92150-55A Datasheet - Page 7

• Manufacturer Part Number: BUK92150-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK92150-55A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
10
I
10
10
10
10
10
D
D
16
12
-1
-2
-3
-4
-5
-6
8
4
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
10 5
2
1
min
4
typ
6
2.6
3.8
2.8
2.2
4
3.6
3.4
3.2
3
2.4
label is V
2
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
03aa36
GS
V
DS
(V)
(V)
03nf44
(V)
10
Rev. 05 — 24 March 2011
3
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
140
120
100
80
10
8
6
4
2
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
N-channel TrenchMOS logic level FET
4
5
BUK92150-55A
8
10
12
V
© NXP B.V. 2011. All rights reserved.
GS
I
D
(V)
(A)
03nf43
03nf41
15
16
7 of 14