PESD5V0L7BAS_BS NXP Semiconductors, PESD5V0L7BAS_BS Datasheet - Page 3

• Manufacturer Part Number: PESD5V0L7BAS_BS
• Description: Low capacitance 7-fold bidirectional ESD protection diode arrays in small plasticpackages designed for the protection of up to seven transmission or data lines fromdamage caused by ElectroStatic Discharge (ESD) and other transients
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
PESD5V0L7BAS_BS
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7.
[1]
Table 8.
Symbol
Per diode
P
I
T
T
Symbol
V
Standard
IEC 61000-4-2; level 4 (ESD); see
MIL-STD-883; class 3 (human body model)
T
PP
j
amb
stg
PP
ESD
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC 61000-4-5;
see
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see
Figure
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Parameter
electrostatic discharge voltage
1.
All information provided in this document is subject to legal disclaimers.
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
Rev. 4 — 23 June 2010
Figure 2
t
Conditions
t
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883
(human body
model)
p
p
= 8/20 s
= 8/20 s
Conditions
> 8 kV (contact)
> 4 kV
[1]
[1]
[1]
Min
-
-
-
65
65
Min
-
-
Figure
© NXP B.V. 2010. All rights reserved.
Max
35
2.5
150
+150
+150
Max
10
10
2.
Unit
W
A
C
C
C
Unit
kV
kV
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