PESDXS2UAT_SER NXP Semiconductors, PESDXS2UAT_SER Datasheet - Page 2

• Manufacturer Part Number: PESDXS2UAT_SER
• Description: Unidirectional double ESD protection diodes in commoncathode configuration in the SOT23 plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
• Unidirectional ESD protection of up to two lines
• Common-cathode configuration
• Max. peak pulse power: P
• Low clamping voltage: V
• Ultra-low reverse leakage current: I
• ESD protection > 30 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); I
APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• Data lines
• CAN bus protection.
DESCRIPTION
Unidirectional double ESD protection diodes in common
cathode configuration in the SOT23 plastic package.
Designed to protect up to two transmission or data lines
against damage from ElectroStatic Discharge (ESD) and
other transients.
MARKING
Note
1. * = p : made in Hong Kong.
2004 Feb 18
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
Double ESD protection diodes
in SOT23 package
* = t : made in Malaysia.
* = W : made in China.
TYPE NUMBER
pp
(CL)R
pp
= 18 A at t
= 330 W at t
= 20 V at I
MARKING CODE
RM
p
< 700 nA
= 8/20 µs.
*7C
*7D
*7A
*7B
*7E
pp
p
= 8/20 µs
= 18 A
(1)
2
QUICK REFERENCE DATA
PINNING
V
C
SYMBOL
RWM
d
Fig.1 Simplified outline (SOT23) and symbol.
PIN
1
2
3
1
2
reverse stand-off
voltage
diode capacitance
V
f = 1 MHz
number of
protected lines
R
PARAMETER
= 0 V;
anode 1
anode 2
common cathode
001aaa401
PESDxS2UAT series
3
DESCRIPTION
3.3, 5, 12, 15
and 24
207, 152, 38, 32
and 23
2
Product data sheet
1
2
VALUE
sym002
3
V
pF
UNIT