BAW156 NXP Semiconductors, BAW156 Datasheet - Page 2

• Manufacturer Part Number: BAW156
• Description: Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 μs
• Continuous reverse voltage:
• Repetitive peak reverse voltage:
• Repetitive peak forward current:
APPLICATION
• Low-leakage current applications in
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are in
common anode configuration.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 11
Per diode
V
V
I
I
I
P
T
T
F
FRM
FSM
SYMBOL
max. 75 V
max. 85 V
max. 500 mA.
surface mounted circuits.
stg
j
RRM
R
tot
Low-leakage double diode
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
PARAMETER
PINNING
handbook, 4 columns
Marking code: JZp = made in Hong Kong; JZt = made in Malaysia.
PIN
1
2
3
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
square wave; T
see Fig.4
T
amb
t
t
t
Top view
p
p
p
= 1 μs
= 1 ms
= 1 s
≤ 25 °C; note 1
cathode
cathode
common anode
Fig.1 Simplified outline (SOT23) and symbol.
2
2
CONDITIONS
j
= 25 °C prior to surge;
3
1
DESCRIPTION
2
−
−
−
−
−
−
−
−
−
−65
−
MIN.
3
Product data sheet
MAM206
85
75
160
140
500
4
1
0.5
250
+150
150
MAX.
BAW156
1
V
V
mA
mA
mA
A
A
A
mW
°C
°C
UNIT