BAV170 NXP Semiconductors, BAV170 Datasheet - Page 5

• Manufacturer Part Number: BAV170
• Description: Epitaxial, medium-speed switching,double diode in a small SOT23 plasticSMD package
• Manufacturer: NXP Semiconductors

handbook, halfpage
NXP Semiconductors
2003 Mar 25
handbook, full pagewidth
Low-leakage double diode
Based on square wave currents; T
V
(1) Maximum values.
(2) Typical values.
Fig.5
(nA)
R
I FSM
I R
10
10
10
10
(A)
10
= 75 V.
10
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
10
1
10
2
1
2
3
−1
1
2
0
1
Reverse current as a function of junction
temperature; per diode.
(1)
(2)
50
100
j
= 25 °C prior to surge.
10
150
T ( C)
j
MLB754
o
200
10
5
2
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
2
1
0
0
Diode capacitance as a function of reverse
voltage; per diode; typical values.
j
= 25 °C.
5
10
3
10
t p (µs)
15
Product data sheet
V R (V)
BAV170
MBG526
MBG704
10
20
4