1PS302 NXP Semiconductors, 1PS302 Datasheet - Page 3

• Manufacturer Part Number: 1PS302
• Description: Dual high-speed switching diode, encapsulated in a very small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
1PS302
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 6.
[1]
Table 7.
T
[1]
[2]
Symbol
Per device
P
T
T
T
Symbol
Per device
R
R
Symbol
Per diode
V
I
C
t
V
R
rr
amb
j
amb
stg
tot
F
FR
th(j-a)
th(j-sp)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Single diode loaded.
Double diode loaded.
T
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
When switched from I
When switched from I
= 25
j
= 25 C before surge.

C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Limiting values
Thermal characteristics
Characteristics
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
All information provided in this document is subject to legal disclaimers.
F
F
Rev. 5 — 16 November 2011
= 10 mA to I
= 10 mA; t
…continued
r
= 20 ns.
R
= 10 mA; R
f = 1 MHz; V
Conditions
I
I
I
I
V
V
V
V
F
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 100 mA
= 25 V
= 80 V
= 25 V; T
= 80 V; T
Conditions
T
Conditions
in free air
amb
L
= 100 ; measured at I
 25 C
j
j
R
= 150 C
= 150 C
= 0 V
Dual high-speed switching diode
[1]
[1]
[1]
[2]
Min
-
-
55
65
Min
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
Typ
610
740
-
-
-
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
Max
300
150
+150
+150
1PS302
Max
415
200
Max
-
-
1.0
1.2
30
0.5
30
100
1.5
4
1.75
Unit
mW
C
C
C
Unit
K/W
K/W
Unit
mV
mV
V
V
nA
A
A
A
pF
ns
V
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