PMEG4020ETP NXP Semiconductors, PMEG4020ETP Datasheet - Page 6

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package

PMEG4020ETP

Manufacturer Part Number
PMEG4020ETP
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PMEG4020ETP
Product data sheet
Fig 4.
Fig 6.
(pF)
(A)
C
I
10
10
10
10
F
600
400
200
d
10
–1
–2
–3
–4
1
0
0.0
voltage; typical values
voltage; typical values
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
Forward current as a function of forward
f = 1 MHz; T
Diode capacitance as a function of reverse
0
j
j
j
j
j
j
(1)
(2)
(3)
0.1
= 175 °C
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
10
0.2
(4)
amb
= 25 °C
(5)
0.3
20
(6)
0.4
0.5
30
All information provided in this document is subject to legal disclaimers.
006aac725
V
006aab654
V
0.6
R
F
(V)
(V)
0.7
40
Rev. 1 — 5 October 2011
Fig 5.
Fig 7.
(A)
I
R
P
40 V, 2 A low VF MEGA Schottky barrier rectifier
(W)
F(AV)
10
10
10
10
10
10
10
10
10
1.0
0.8
0.6
0.4
0.2
0.0
-1
-2
-3
-4
-5
-6
-7
-8
-9
voltage; typical values
function of average forward current; typical
values
(1) T
(2) T
(3) T
(4) T
(5) T
Reverse current as a function of reverse
T
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1.0
Average forward power dissipation as a
0
0
j
= 175 °C
j
j
j
j
j
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
10
(1)
1
PMEG4020ETP
(2)
(1)
(2)
(3)
(4)
(5)
20
(3)
2
30
I
F(AV)
© NXP B.V. 2011. All rights reserved.
V
006aac726
006aac727
R
(A)
(V)
(4)
40
3
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