PMEG3020EPA NXP Semiconductors, PMEG3020EPA Datasheet - Page 7

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection

PMEG3020EPA

Manufacturer Part Number
PMEG3020EPA
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PMEG3020EPA_1
Product data sheet
Fig 7.
Fig 9.
P
I
F(AV)
F(AV)
(W)
(A)
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
1.5
1.2
0.9
0.6
0.3
0.0
3.0
2.0
1.0
0.0
0.0
T
Average forward power dissipation as a
function of average forward current; typical
values
0
FR4 PCB, standard footprint
T
Average forward current as a function of
ambient temperature; typical values
j
j
= 150 °C
= 150 °C
(1)
(2)
(3)
(4)
25
50
(1)
1.0
75
(2)
100
2.0
(3)
125
I
F(AV)
T
amb
006aab643
006aab645
150
(A)
(°C)
(4)
Rev. 01 — 15 December 2009
175
3.0
Fig 8.
Fig 10. Average forward current as a function of
P
I
F(AV)
R(AV)
(W)
(A)
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
4.5
3.0
1.5
3.0
2.0
1.0
0.0
0
0
0
T
Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, mounting pad for cathode 1 cm
T
ambient temperature; typical values
2 A low V
j
j
= 125 °C
= 150 °C
25
(1)
(2)
(3)
(4)
50
F
10
MEGA Schottky barrier rectifier
PMEG3020EPA
75
(1)
(2)
(3)
100
20
125
T
© NXP B.V. 2009. All rights reserved.
V
amb
R
006aab644
006aab646
150
(V)
(°C)
(4)
2
175
30
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