PMEG2010EA NXP Semiconductors, PMEG2010EA Datasheet - Page 3

• Manufacturer Part Number: PMEG2010EA
• Description: Planar Maximum Efficiency General Application (MEGA)Schottky barrier diode with an integrated guard ring forstress protection, encapsulated in a SOD323 (SC-76) verysmall SMD plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulsed test: t
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board with Cu clad 10 x 10 mm.
2. Device mounted on an FR4 printed-circuit board with Cu clad 40 x 40 mm.
2004 Feb 06
V
I
C
R
amb
R
F
Low V
d
th(j-a)
SYMBOL
SYMBOL
= 25 °C unless otherwise specified.
F
(MEGA) Schottky barrier diode
p
continuous forward voltage
continuous reverse current
diode capacitance
thermal resistance from junction to ambient
= 300 μs; δ = 0.02.
PARAMETER
PARAMETER
see Fig.2; note 1
see Fig.3; note 1
V
R
3
I
I
I
V
V
V
F
F
F
= 5 V; f = 1 MHz; see Fig.4 19
R
R
R
= 10 mA
= 100 mA
= 1 000 mA
= 5 V
= 8 V
= 15 V
CONDITIONS
note 1
note 2
CONDITIONS
240
300
480
5
7
10
TYP.
PMEG2010EA
270
350
550
10
20
50
25
VALUE
Product data sheet
MAX.
220
180
mV
mV
mV
μA
μA
μA
pF
UNIT
UNIT
K/W
K/W