BYW29E-200 NXP Semiconductors, BYW29E-200 Datasheet - Page 2

• Manufacturer Part Number: BYW29E-200
• Description: Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package
• Manufacturer: NXP Semiconductors

1;3 Semiconductors
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYW29E series is supplied in
the conventional leaded SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ESD LIMITING VALUE
August 2001
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
V
V
V
I
I
I
I
I
T
T
SYMBOL PARAMETER
V
F(AV)
FRM
FSM
RRM
RSM
j
stg
RRM
RWM
R
C
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Peak non-repetitive reverse
surge current
Operating junction
temperature
Storage temperature
Electrostatic discharge
capacitor voltage
PINNING
SYMBOL
PIN
tab
1
2
CONDITIONS
square wave; δ = 0.5; T
square wave; δ = 0.5; T
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied V
t
t
p
p
= 2 μs; δ = 0.001
= 100 μs
k
1
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
cathode
anode
cathode
DESCRIPTION
1
mb
mb
BYW29E
≤ 128 ˚C
≤ 128 ˚C
a
2
RRM(max)
QUICK REFERENCE DATA
SOD59 (TO220AC)
MIN.
- 40
-
-
-
-
-
-
-
-
-
-
V
R
MIN.
-100
= 100V/ 150 V/ 200 V
100
100
100
-
V
I
RRM
Product specification
I
BYW29E series
F
t
F(AV)
rr
tab
≤ 0.895 V
MAX.
≤ 25 ns
-150
150
150
150
150
150
0.2
0.2
≤ 0.2 A
16
80
88
8
= 8 A
1
MAX.
2
8
-200
200
200
200
Rev 1.400
UNIT
UNIT
kV
˚C
˚C
V
V
V
A
A
A
A
A
A