BT168GW NXP Semiconductors, BT168GW Datasheet - Page 6

• Manufacturer Part Number: BT168GW
• Description: Passivated, sensitive gate thyristor in a SOT223 plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Package information
BT168GW
Product data sheet
Fig 9.
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
(A)
H
I
(1) T
(2) T
(3) T
T
5
4
3
2
1
0
3
2
1
0
0.4
V
R
50
R
junction temperature
On-state current characteristics
j
j
j
O
S
GK
= 125 C (typical).
= 25 C (maximum).
= 125 C (maximum).
= 0.27 .
= 1.0 V.
= 1 k.
0
1.2
Epoxy meets requirements of UL94 V-0 at
50
(1)
2
100
(2)
V
All information provided in this document is subject to legal disclaimers.
T
001aab505
001aab504
T
(V)
j
( C)
(3)
150
2.8
Rev. 5 — 21 October 2011
Thyristors; logic level for RCD/GFI/LCCB applications
Fig 10. Normalized latching current as a function of
Fig 12. Critical rate of rise of off-state voltage as a
I
L(25 C)
dV
(V/ s)
I
L
(1) R
(2) Gate open circuit.
D
10
10
10
/dt
10
3
2
1
0
4
3
2
1
50
0
R
junction temperature
function of junction temperature; typical
values
⁄
8
GK
GK
inch.
= 1 k.
= 1 k.
0
50
50
(1)
(2)
100
BT168GW
100
© NXP B.V. 2011. All rights reserved.
T
j
001aab503
T
001aab507
( C)
j
( C)
150
150
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