BT152-600R NXP Semiconductors, BT152-600R Datasheet - Page 5

• Manufacturer Part Number: BT152-600R
• Description: Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance
• Manufacturer: NXP Semiconductors

1;3 Semiconductors
March 1997
Thyristors
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
2.5
1.5
0.5
GT
3
2
1
0
3
2
1
0
3
2
1
0
-50
-50
-50
(T
IGT(25 C)
IL(25 C)
IH(25 C)
IGT(Tj)
IL(Tj)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BT152
BT145
BT152
Tj / C
Tj / C
Tj / C
50
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of rise of off-state voltage,
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
10000
1000
50
40
30
20
10
0.001
100
0.01
0
10
0.1
0
10
10us
IT / A
1
Rs = 0.015 ohms
0
Tj = 125 C
dVD/dt (V/us)
dV
Vo = 1.12 V
Zth j-mb (K/W)
Tj = 25 C
D
/dt versus junction temperature T
0.1ms
0.5
pulse width t
1ms
50
tp / s
BT152
VT / V
10ms
BT152
Tj / C
1
typ
P
D
p
.
0.1s
Product specification
100
t
BT152 series
p
1.5
RGK = 100 Ohms
gate open circuit
th j-mb
1s
max
t
Rev 1.200
, versus
j
.
10s
150
2