BT136S-600D NXP Semiconductors, BT136S-600D Datasheet - Page 3

• Manufacturer Part Number: BT136S-600D
• Description: Planar passivated very sensitive gate four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT136S-600D
Product data sheet
Symbol
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
GM
G(AV)
T
/dt
I
T(RMS)
(A)
5
4
3
2
1
0
base temperature; maximum values
RMS on-state current as a function of mounting
50
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
0
50
100
All information provided in this document is subject to legal disclaimers.
T
003aae828
mb
( C)
150
Rev. 04 — 31 March 2011
Conditions
full sine wave; T
see
full sine wave; T
see
full sine wave; T
t
t
I
T2+ G+
I
T2+ G-
I
T2- G-
I
T2- G+
over any 20 ms period
p
p
T
T
T
T
= 16.7 ms; see
= 10 ms; sine-wave pulse
= 6 A; I
= 6 A; I
= 6 A; I
= 6 A; I
Figure
Figure
G
G
G
G
Fig 2.
1; see
4; see
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
I
T(RMS)
(A)
j(init)
mb
j(init)
12
10
8
6
4
2
0
10
Figure
Figure
Figure 5
duration; maximum values
f = 50 Hz
T
RMS on-state current as a function of surge
≤ 107 °C;
mb
= 25 °C; t
2
= 25 °C;
G
G
G
G
≤ 107 °C
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
4; see
3; see
p
10
= 20 ms;
Figure 5
Figure 2
1
BT136S-600D
1
surge duration
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2011. All rights reserved.
003aae830
3.1
150
Max
600
4
25
27
50
50
50
10
2
5
5
0.5
125
(s)
10
4Q Triac
Unit
V
A
A
A
A
A/µs
A/µs
A/µs
A/µs
A
V
W
W
°C
°C
3 of 15
2
s