BT1308W-400D NXP Semiconductors, BT1308W-400D Datasheet - Page 6

Planar passivated very sensitive gate four quadrant triac in a SOT223 surface-mounable plastic package

BT1308W-400D

Manufacturer Part Number
BT1308W-400D
Description
Planar passivated very sensitive gate four quadrant triac in a SOT223 surface-mounable plastic package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
6. Characteristics
Table 5.
T
BT1308W_SER_D_1
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dV
t
GT
L
H
D
gt
j
T
GT
= 25 C unless otherwise specified.
D
com
/dt
/dt
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state voltage V
rate of change of
commutating voltage
gate-controlled turn-on time
Characteristics
Conditions
V
V
V
I
V
V
V
exponential waveform; gate open circuit
V
I
I
dI
T
TM
TM
D
D
D
D
D
D
DM
DM
G
T2+ G+
T2+ G
T2 G
T2 G+
T2+ G+
T2+ G
T2 G
T2 G+
= 0.85 A; see
/dt = 5 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 0.84 A; dI
= 1 A; V
= 0.67
= V
Rev. 01 — 27 February 2008
DRM
DRM(max)
DRM(max)
; I
T
G
G
T
D
T
= 0.1 A; see
= 0.1 A; see
= 0.1 A; see
= 0.1 A; see
V
= V
= 0.1 A; T
; T
DRM(max)
com
Figure 9
; T
DRM(max)
j
/dt = 0.3 A/ms
= 125 C
j
= 50 C;
; T
j
= 110 C
; I
j
Figure 8
Figure 7
Figure 10
Figure 11
= 110 C;
G
= 25 mA;
BT1308W series D
Min
-
-
-
-
-
-
-
-
-
-
-
0.1
-
30
-
-
Typ
1
2
2
4
1
5
1
2
1
1.35
0.9
0.7
0.1
45
5
2
© NXP B.V. 2008. All rights reserved.
Triacs logic level
Max
5
5
5
7
10
10
10
10
10
1.6
2
-
0.5
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/ s
V/ s
s
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