BT151S-800R NXP Semiconductors, BT151S-800R Datasheet - Page 4

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability, high surge current capability and high thermal cyclin

BT151S-800R

Manufacturer Part Number
BT151S-800R
Description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability, high surge current capability and high thermal cyclin
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
BT151S_SER_L_R_5
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(A)
(A)
10
10
10
25
20
15
10
5
0
3
2
10
10
t
f = 50 Hz; T
duration; maximum values
p
5
2
10 ms
mb
10
dl
103 C
1
T
/dt limit
1
surge duration (s)
10
001aaa954
4
Rev. 05 — 9 October 2006
10
Fig 5. RMS on-state current as a function of mounting
I
T(RMS)
(A)
BT151S series L and R
16
12
8
4
0
base temperature; maximum values
50
10
3
0
50
t
T
p
I
T
j
(s)
initial = 25 C max
t
p
100
© NXP B.V. 2006. All rights reserved.
T
001aaa956
001aaa998
mb
I
TSM
( C)
t
10
150
Thyristors
2
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