K4P160411C-BC60 Samsung, K4P160411C-BC60 Datasheet
K4P160411C-BC60
Specifications of K4P160411C-BC60
Available stocks
Related parts for K4P160411C-BC60
K4P160411C-BC60 Summary of contents
Page 1
... This 4Mx4 Fast Page Mode Quad CAS DRAM family is fabricated using Samsung s advanced CMOS process to realize high band- width, low power consumption and high reliability. FEATURES • Part Identification - K4P170411C-B(F) (5V, 4K Ref.) - K4P160411C-B(F) (5V, 2K Ref.) • Active Power Dissipation Refresh Cycle Speed 4K ...
Page 2
... K4P170411C, K4P160411C • K4P17(6)0411C DQ0 DQ1 W RAS *A11(N.C) CAS0 CAS1 A10 *A11 is N.C for K4P160411C(5V, 2K Ref. product 300mil 28 SOJ F : 300mil 28 TSOP II PIN CONFIGURATION (Top Views DQ3 3 26 DQ2 4 25 CAS3 *A11(N.C) ...
Page 3
... K4P170411C, K4P160411C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability ...
Page 4
... K4P170411C, K4P160411C DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care CC1 Normal I Don t care CC2 L I Don t care CC3 I Don t care CC4 Normal I Don t care CC5 L I Don t care CC6 I L Don t care CC7 I L Don t care CCS Operating Current (RAS and CAS, Address cycling @t ...
Page 5
... K4P170411C, K4P160411C CAPACITANCE (T = Parameter Input capacitance [A0 ~ A11] Input capacitance [RAS, CASx, W, OE] Output capacitance [DQ0 - DQ3] AC CHARACTERISTICS ( Test condition : V =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V CC Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS ...
Page 6
... K4P170411C, K4P160411C AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (2K, Normal) Refresh period (4K, Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge to W delay time ...
Page 7
... K4P170411C, K4P160411C TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time Column address to RAS lead time ...
Page 8
... K4P170411C, K4P160411C NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved (min) and V (max) are reference levels for measuring timing of input signals Transition times are measured between V Measured with a load equivalent to 2 TTL loads and 100pF. ...
Page 9
... K4P170411C, K4P160411C READ CYCLE NOTE : D = OPEN OUT RAS CAS0 CAS1 CAS2 CAS3 DQ0 ~ DQ3 RAS t CSH t CRP t RCD t CRP t CRP t CRP t RAD ...
Page 10
... K4P170411C, K4P160411C WRITE CYCLE ( EARLY WRITE ) RAS CAS0 CAS1 CAS2 CAS3 DQ0 ~ DQ3 RAS t CSH t CRP t RCD t CRP t CRP t CRP t CSH t RAD ...
Page 11
... K4P170411C, K4P160411C WRITE CYCLE ( OE CONTROLLED WRITE ) RAS CAS0 CAS1 CAS2 CAS3 DQ0 ~ DQ3 RAS t CSH t CRP t RCD t CRP t CRP t CRP t RAD ...
Page 12
... K4P170411C, K4P160411C READ - MODIFY - WRTIE CYCLE RAS CAS0 CAS1 CAS2 CAS3 DQ0 ~ DQ3 RAS t CSH t CRP t RCD t CRP t CRP t CRP t RAD ...
Page 13
... K4P170411C, K4P160411C FAST PAGE READ CYCLE NOTE : D = OPEN OUT RAS CRP CAS0 CAS1 CAS2 CAS3 ASR DQ0 DQ1 DQ2 ...
Page 14
... K4P170411C, K4P160411C FAST PAGE WRITE CYCLE ( EARLY WRITE ) RAS CRP CAS0 CAS1 CAS2 CAS3 ASR ADDR DQ0 DQ1 DQ2 ...
Page 15
... K4P170411C, K4P160411C FAST PAGE READ - MODIFY - WRITE CYCLE RAS CAS0 CAS1 CAS2 CAS3 ASR ROW A ADDR RCS DQ0 ~ DQ3 RCD t CAS t CLCH ...
Page 16
... K4P170411C, K4P160411C RAS - ONLY REFRESH CYCLE NOTE : W, OE Don t care OPEN OUT RAS CRP CASX ASR CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE Don t care RAS CASX DQ0 ~ DQ3 ...
Page 17
... K4P170411C, K4P160411C HIDDEN REFRESH CYCLE ( READ ) RAS CASX DQX RAS t CRP t t RCD RSH t RAD ASR RAH ASC t CAH ROW COLUMN ADDRESS ADDRESS t RCS CLZ ...
Page 18
... K4P170411C, K4P160411C HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CASX DQX RAS t CRP t t RCD RSH t RAD ASR RAH ASC t CAH ROW COLUMN ADDRESS ADDRESS ...
Page 19
... K4P170411C, K4P160411C CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : OE Don t care RAS CASX DQ0 ~ DQ3 TEST MODE IN CYCLE NOTE : OE Don t care RAS CASX DQ0 ~ DQ3 ...
Page 20
... K4P170411C, K4P160411C PACKAGE DIMENSION 28 SOJ 300mil #28 #1 0.0375 (0.95) 28 TSOP(II) 300mil 0.037 (0.95) 0.741 (18.82) MAX 0.720 (18.30) 0.730 (18.54) 0.050 (1.27) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.741 (18.81) MAX 0.721 (18.31) 0.047 (1.20) 0.729 (18.51) MAX 0.050 (1.27) 0.002 (0.05) MIN 0.012 (0.30) 0.020 (0.50) CMOS DRAM Units : Inches (millimeters) 0.006 (0.15) 0.012 (0.30) 0.027 (0.69) MIN Units : Inches (millimeters) ...