ESM3030DV SGS-Thomson-Microelectronics, ESM3030DV Datasheet

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ESM3030DV

Manufacturer Part Number
ESM3030DV
Description
NPN DARLINGTON POWER MODULE
Manufacturer
SGS-Thomson-Microelectronics
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ESM3030DV
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
ESM3030DV
Manufacturer:
ST
Quantity:
27
INDUSTRIAL APPLICATIONS:
ABSOLUTE MAXIMUM RATINGS
September 1997
V
Symbol
CEO(sus)
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
ULTRAFAST FREEWHEELING DIODE
ISOLATED CASE (2500V RMS)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
MOTOR CONTROL
SMPS & UPS
DC/DC & DC/AC CONVERTERS
WELDING EQUIPMENT
V
V
V
P
T
I
I
CEV
EBO
I
CM
I
BM
T
I SO
stg
C
t ot
B
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Tot al Dissipation at T
Storage Temperature
Max. Ope rating Junction Temperature
Insulation Withstand Voltage (AC-RMS)
th
JUNCTION CASE
Parameter
p
c
= 10 ms)
= 25
C
NPN DARLINGTON POWER MODULE
p
= 0)
= 10 ms)
B
BE
o
C
= 0)
= -5 V)
INTERNAL SCHEMATIC DIAGRAM
-55 to 150
Value
2500
400
300
100
150
225
150
ISOTOP
10
7
5
ESM3030DV
Unit
o
o
o
W
V
V
V
A
A
A
A
C
C
C
1/8

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ESM3030DV Summary of contents

Page 1

... T Storage Temperature stg T Max. Ope rating Junction Temperature j V Insulation Withstand Voltage (AC-RMS September 1997 INTERNAL SCHEMATIC DIAGRAM = - ms ESM3030DV ISOTOP Value Unit 400 V 300 100 A 150 225 W o -55 to 150 ...

Page 2

... ESM3030DV THERMAL DATA R Thermal Resistance Junction-case (transistor) thj- Thermal Resistance Junction-case (diode) thj- Thermal Resistance Case-heatsink With Conductive t hc-h Grease Applied ELECTRICAL CHARACTERISTICS (T Symbol Parameter I # Collecto r Cut-of f CER Current ( Collecto r Cut-of f CEV Current ( Emitter Cut-off Current ...

Page 3

... Safe Operating Areas Derating Curve Collector Emitter Saturation Voltage ESM3030DV Thermal Impedance Collector-emitter Voltage Versus base-emitter Resistance Base-Emitter Saturation Voltage 3/8 ...

Page 4

... ESM3030DV Reverse Biased SOA Reverse Biased AOA Switching Times Inductive Load 4/8 Foward Biased SOA Forward Biased AOA Switching Times Inductive Load Versus Temperature ...

Page 5

... Dc Current Gain Peak Reverse Current Versus di /dt F Turn-on Switching Waveforms ESM3030DV Typical V Versus Turn-on Switching Test Circuit 5/8 ...

Page 6

... ESM3030DV Turn-on Switching Test Circuit Turn-off Switching Test Circuit of Diode 6/8 Turn-off Switching Waveforms Turn-off Switching Waveform of Diode ...

Page 7

... 4.1 K 14.9 L 30 inch MAX. MIN. TYP. 12.2 0.466 9.1 0.350 2.05 0.076 0.85 0.029 12.8 0.496 25.5 0.990 31.7 1.240 0.157 4.3 0.161 15.1 0.586 30.3 1.185 38.2 1.488 0.157 8.2 0.307 ESM3030DV MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 0.169 0.594 1.193 1.503 0.322 7/8 ...

Page 8

... ESM3030DV Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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