MT28F800B5WG-8B Micron Semiconductor Products, MT28F800B5WG-8B Datasheet
MT28F800B5WG-8B
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MT28F800B5WG-8B Summary of contents
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... PP with no loss of performance. 2. Contact factory for availability. Part Number Example: MT28F800B5WG-8 BET 8Mb Smart 5 Boot Block Flash Memory MT28F800B5_3.fm - Rev. 3, Pub. 8/2002 PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE . SMART 5 BOOT BLOCK FLASH MEMORY ...
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... Order Number and Part Marking MT28F800B5WG-8 B MT28F800B5WG-8 T MT28F800B5WG-8 BET MT28F800B5WG-8 TET Notes: 1. Contact factory for availability. 8Mb Smart 5 Boot Block Flash Memory MT28F800B5_3.fm - Rev. 3, Pub. 8/2002 SMART 5 BOOT BLOCK FLASH MEMORY Pin Assignment (Top View) 48 A16 47 BYTE ...
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X - Decoder/Block Erase Control 8Mb Smart 5 Boot Block Flash Memory MT28F800B5_3.fm - Rev. 3, Pub. 8/2002 SMART 5 BOOT BLOCK FLASH MEMORY MUX Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 8Mb ...
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PIN DESCRIPTIONS 40-PIN 48-PIN 44-PIN SOP TSOP TSOP NUMBERS NUMBERS NUMBERS – – 47 11, 10 21, 20, 19, 25, 24 ...
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TRUTH TABLE (MT28F800B5) FUNCTION RP# H Standby L RESET READ H READ (word mode) H READ (byte mode) Output Disable H WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP H 3 ERASE CONFIRM H WRITE SETUP WRITE (word mode) ...
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TRUTH TABLE (MT28F008B5) FUNCTION Standby RESET READ READ Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE 5 READ ARRAY 2 WRITE/ERASE (BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM 3, 6 ERASE CONFIRM WRITE ...
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FUNCTIONAL DESCRIPTION The MT28F800B5 and MT28F008B5 Flash memo- ries incorporate a number of features ideally suited for system firmware. The memory array is segmented into individual erase blocks. Each block may be erased without affecting data stored in other blocks. ...
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V status, write status, and erase status. Command Execution Cell (CEL) The CEL receives and interprets commands to the device. These commands control the operation of the ISM and the read ...
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Parameter Blocks The two 8KB parameter blocks store less sensitive and more frequently changing system parameters and also may store configuration or diagnostic coding. These blocks are enabled for erasure when the super-voltage unlock ...
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INPUT OPERATIONS The DQ pins are used either to input data to the array or to input a command to the CEL. A command input issues an 8-bit command to the CEL to control the mode of operation of the ...
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COMMAND SET To simplify writing of the memory blocks, the MT28F800B5 and MT28F008B5 incorporate an ISM that controls all internal algorithms for writing and erasing the floating gate memory cells. An 8-bit com- mand set is used to control the ...
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COMMAND EXECUTION Commands are issued to bring the device into dif- ferent operational modes. Each mode allows specific operations to be performed. Several modes require a sequence of commands to be written before they are reached. The following section describes ...
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ERASE Sequence Executing an ERASE sequence sets all bits within a block to logic 1. The command sequence necessary to execute an ERASE is similar to that of a WRITE. To pro- vide added security against accidental block erasure, two ...
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WRITE/ERASE CYCLE ENDURANCE The MT28F800B5 and MT28F008B5 are designed and fabricated to meet advanced firmware storage requirements. To ensure this level of reliability, V must ±10% during WRITE or ERASE cycles. Due to process technology advances, 5V ...
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SELF-TIMED WRITE SEQUENCE (WORD OR BYTE WRITE) Start WRITE 40h or 10h WRITE Word or Byte Address/Data STATUS REGISTER READ SR7 = 1? YES Complete Status Check (optional) WRITE Complete Notes: 1. Sequence may be repeated ...
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SELF-TIMED BLOCK ERASE SEQUENCE Start WRITE 20h WRITE D0h, Block Address STATUS REGISTER READ NO SR7 = 1? Suspend ERASE? YES 2 Complete Status Check (optional) 3 ERASE Complete Notes: 1. Sequence may be repeated to ...
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Smart 5 Boot Block Flash Memory MT28F800B5_3.fm - Rev. 3, Pub. 8/2002 SMART 5 BOOT BLOCK FLASH MEMORY ERASE SUSPEND/RESUME SEQUENCE Start (ERASE in progress) WRITE B0h (ERASE SUSPEND STATUS REGISTER READ NO SR7 = ...
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ABSOLUTE MAXIMUM RATINGS* Voltage on V Supply Relative Input Voltage Relative to V ................... -0. Voltage Relative V .....................-0. RP Pin Voltage Relative to Vss... -0.5V to +12.6V Temperature Under ...
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CAPACITANCE (T = +25º MHz) A PARAMETER/CONDITION Input Capacitance Output Capacitance READ AND STANDBY CURRENT DRAIN Commercial Temperature (0ºC PARAMETER/CONDITION READ CURRENT: WORD-WIDE, TTL INPUT LEVELS (CE OE ...
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READ TIMING PARAMETERS ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS Commercial Temperature (0ºC AC CHARACTERISTICS PARAMETER Read cycle time Access time from CE# Access time from OE# Access time from address RP# HIGH to output valid delay OE# or CE# ...
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AC TEST CONDITIONS Input pulse levels ...................................... 0.4V to 2.4V Input rise and fall times.......................................<10ns Input timing reference level .................... 0.8V and 2V Output timing reference level ................. 0.8V and 2V Output load........................1 TTL gate and A0–A18/(A19) ...
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V IH A0–A18/(A19 DQ0–DQ7 DQ8–DQ14 RP TIMING PARAMETERS Commercial Temperature (0ºC ...
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RECOMMENDED DC WRITE/ERASE CONDITIONS Commercial Temperature (0ºC PARAMETER/CONDITION V WRITE/ERASE lockout voltage PP V voltage during WRITE/ERASE operation PP Boot block unlock voltage V WRITE/ERASE lockout voltage CC WRITE/ERASE CURRENT DRAIN Commercial Temperature (0ºC PARAMETER/CONDITION WORD WRITE CURRENT: V SUPPLY ...
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SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS: WE#- (CE#-)CONTROLLED WRITES Commercial Temperature (0ºC AC CHARACTERISTICS PARAMETER WRITE cycle time WE# (CE#) HIGH pulse width WE# (CE#) pulse width Address setup time to WE# (CE#) HIGH Address hold ...
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V IH A0–A18/(A19) Note DQ0–DQ7/ CMD 2 DQ0–DQ15 ...
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V IH A0–A18/(A19) Note DQ0–DQ7/ CMD 2 DQ0–DQ15 ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 20 .007 (0.18) .005 (0.13) Notes: 1. All dimensions in millimeters MAX/MIN or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold protrusion ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 24 .007 (0.18) .005 (0.12) Notes: 1. All dimensions in millimeters MAX/MIN or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold protrusion ...
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TYP PIN #1 INDEX Notes: 1. Contact factory for availability 2. All dimensions in millimeters MAX/MIN or typical where noted. 3. Package width and length do not include mold protrusion; allowable mold protrusion is ...
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REVISION HISTORY Rev. 3, ...............................................................................................................................................................................8/02 • Removed PRELIMINARY designation t • Changed RS from 600ns (MIN) to 1,000ns (MIN) • Changed V from 0.45V (MAX) to 0.50V (MAX) OL Rev. 2, PRELIMINARY....................................................................................................................................................12/01 • Updated input capacitance specification t • Updated ...