MT28F016S5VG-9 Micron Semiconductor Products, MT28F016S5VG-9 Datasheet
MT28F016S5VG-9
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MT28F016S5VG-9 Summary of contents
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... Timing 90ns access • Package Plastic 40-pin TSOP Type 1 (10mm x 20mm) VG Part Number Example: MT28F016S5VG-9 GENERAL DESCRIPTION The MT28F016S5 is a nonvolatile, electrically block- erasable (flash), programmable, read-only memory con- taining 2,097,152 bytes (8 bits). Writing or erasing the device is done with ...
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I/O Control Logic Addr. A0-A20 Buffer/ Latch Power (Current) Control Command CE# Execution OE# Logic WE# RP RY/BY Meg x 8 Smart 5 Even-Sectored Flash Memory F42.p65 – Rev. 1/00 SMART 5 EVEN-SECTORED FLASH MEMORY ...
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PIN DESCRIPTIONS TSOP PIN NUMBERS SYMBOL TYPE 38 WE# Input 9 CE# Input 12 RP# Input 37 OE# Input 24, 23, 22, 21, A0-A20 Input 20, 19, 18, 17, 16, 15, 14, 13 ...
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TRUTH TABLE FUNCTION Standby Deep Power-Down/Reset READ READ Output Disable 2, 3 WRITE/ERASE ERASE SETUP 4 ERASE CONFIRM WRITE SETUP 5 WRITE 6 READ ARRAY DEVICE CONFIGURATION Manufacturer Compatibility ID Device ID NOTE (LOW), H ...
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FUNCTIONAL DESCRIPTION The MT28F016S5 flash memory incorporates a num- ber of features that make it ideally suited for system firmware or data storage. The memory array is seg- mented into individual erase blocks. Each block may be erased without affecting ...
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MEMORY ARCHITECTURE The MT28F016S5 memory array architecture is de- signed to allow sectors to be erased without disturbing the rest of the array. The array is divided into 32 addressable blocks that are independently erasable. When blocks rather than the ...
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INPUT OPERATIONS The DQ pins are used either to input data to the array or to input a command to the CEL. A command input issues an 8-bit command to the CEL to control the mode of operation of the ...
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COMMAND RESERVED READ ARRAY READ DEVICE CONFIGURATION READ STATUS REGISTER CLEAR STATUS REGISTER ERASE SETUP ERASE CONFIRM WRITE SETUP ERASE SUSPEND 2 Meg x 8 Smart 5 Even-Sectored Flash Memory F42.p65 – Rev. 1/00 SMART 5 EVEN-SECTORED FLASH MEMORY Table ...
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STATUS BIT # STATUS REGISTER BIT SR7 ISM STATUS 1 = Ready 0 = Busy SR6 ERASE SUSPEND STATUS 1 = ERASE suspended 0 = ERASE in progress/completed SR5 ERASE STATUS 1 = BLOCK ERASE error 0 = Successful BLOCK ...
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COMMAND EXECUTION Commands are issued to bring the device into different operational modes. Each mode allows specific operations to be performed. Several modes require a sequence of commands to be written before they are reached. The following section describes the ...
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ERASE SEQUENCE Executing an ERASE sequence will set all bits within a block to logic 1. The command sequence necessary to execute an ERASE is similar to that of a WRITE. To provide added security against accidental block era- sure, ...
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STATUS BITS SR5 SR4 SR3 ERROR DESCRIPTION errors voltage error WRITE error WRITE error ERASE error ERASE error, ...
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SELF-TIMED WRITE SEQUENCE Start WRITE 40H or 10H WRITE Byte Address/Data STATUS REGISTER READ SR7 = 1? YES Complete Status Check (optional) WRITE Complete NOTE: 1. Sequence may be repeated for additional ...
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SELF-TIMED BLOCK ERASE SEQUENCE Start WRITE 20H WRITE D0H, Block Address STATUS REGISTER or RY/BY# Polling NO SR7 = 1? Suspend ERASE? YES 2 Complete Status Check (optional) 3 ERASE Complete NOTE: ...
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Meg x 8 Smart 5 Even-Sectored Flash Memory F42.p65 – Rev. 1/00 SMART 5 EVEN-SECTORED FLASH MEMORY ERASE SUSPEND SEQUENCE Start (ERASE in progress) WRITE B0H (ERASE SUSPEND STATUS REGISTER READ ...
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ABSOLUTE MAXIMUM RATINGS* Voltage on V Supply CC Relative to V ............................. -0.5V to +6V** SS Input Voltage Relative to V ................ -0.5V to +6V Voltage Relative to V ................. -0.5V to +12. Temperature Under Bias ...
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CAPACITANCE (T = +25° MHz) A PARAMETER/CONDITION Input Capacitance Output Capacitance READ AND STANDBY CURRENT DRAIN (0°C T +70° +5V ±10 PARAMETER/CONDITION READ CURRENT: TTL INPUT LEVELS (CE OE# = ...
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READ TIMING PARAMETERS ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (0°C T +70° +5V ±10 CHARACTERISTICS PARAMETER READ cycle time Access time from CE# Access time from OE# Access time from address RP# HIGH to ...
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V IH A0-A20 DQ0-DQ7 RWH TIMING PARAMETERS SYMBOL ACE t ...
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RECOMMENDED DC WRITE/ERASE CONDITIONS (0°C T +70° +5V ±10 PARAMETER/CONDITION V WRITE/ERASE lockout voltage PP V voltage during WRITE/ERASE operation PP V WRITE/ERASE lockout voltage CC WRITE/ERASE CURRENT DRAIN (0°C T +70° +5V ±10%; ...
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SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS: WE# (CE#)-CONTROLLED WRITES (0°C T +70° +5V ±10 CHARACTERISTICS PARAMETER WRITE cycle time WE# (CE#) HIGH pulse width WE# (CE#) pulse width Address setup time ...
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V IH A0-A20 Note DQ0-DQ7 RY/BY ...
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V IH A0-A20 Note CMD DQ0-DQ7 RY/BY# ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 20 .007 (0.18) .005 (0.13) 1. All dimensions in inches (millimeters) MAX or typical where noted. NOTE: 2. Package width and length do not include mold protrusion; allowable mold ...