BSM50GD120DLC Eupec GmbH, BSM50GD120DLC Datasheet
BSM50GD120DLC
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BSM50GD120DLC Summary of contents
Page 1
... CES C,nom 100 A CRM P 350 W tot V +/- 20V V GES 100 A FRM 2 2 430 2,5 kV ISOL min. typ. max 2,1 2 sat - 2,4 2 4,5 5,5 6,5 V GE( ies res CES - 200 - 400 nA GES Seriendatenblatt_BSM50GD120DLC.xls ...
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... VGE = -15V 125° 2(8) min. typ. max 0,05 - µs d,on - 0,06 - µ 0,05 - µ 0,05 - µ 0,25 - µs d,off - 0,3 - µ 0,03 - µ 0,07 - µ 6,4 - mWs 6,2 - mWs off I - 400 - sCE CC‘+EE‘ min. typ. max 1,8 2 1,7 2 5,1 - µ 10,7 - µ 1,9 - mWs rec - 4 - mWs Seriendatenblatt_BSM50GD120DLC.xls ...
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... BSM50GD120DLC Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = Paste grease terminals M6 3(8) min. typ. max 0,35 K/W thJC - - 0,7 K 0,02 - K/W thCK 150 ° -40 - 125 ° -40 - 150 °C stg 225 180 g Seriendatenblatt_BSM50GD120DLC.xls ...
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... Tj = 125° 0,0 0,5 1,0 Ausgangskennlinienfeld (typisch) Output characteristic (typical) 100 90 VGE = 17V 80 VGE = 15V VGE = 13V 70 VGE = 11V VGE = 9V 60 VGE = 0,0 0,5 1,0 BSM50GD120DLC 15V GE 1,5 2,0 2 1,5 2,0 2,5 3,0 3,5 V [ 3,0 3,5 4 125°C vj 4,0 4,5 5,0 Seriendatenblatt_BSM50GD120DLC.xls ...
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... Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 100 0,0 0,5 BSM50GD120DLC 20V 25° 125° [ 25° 125°C 1,0 1,5 2,0 V [ 2,5 3,0 Seriendatenblatt_BSM50GD120DLC.xls ...
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... C off C V =15V 600V gon goff [ off V =15V , I = 50A , V = 600V , 100 6( rec C = 125° 100 ) , rec G = 125°C j 120 140 Seriendatenblatt_BSM50GD120DLC.xls ...
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... IC,Modul IC,Chip 200 BSM50GD120DLC Z thJC 0 [sec 68,32 229,97 0,009 0,045 41,46 305,3 0,003 0,022 V = 15V 400 600 800 1000 V [ (t) Zth:Diode Zth:IGBT 10 100 3 4 18,25 33,46 0,073 0,229 271,51 81,73 0,064 0,344 = 15 Ohm 125° 1200 1400 Seriendatenblatt_BSM50GD120DLC.xls ...
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... Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GD120DLC 8(8) Seriendatenblatt_BSM50GD120DLC.xls ...