BSM50GB120DN2 Eupec GmbH, BSM50GB120DN2 Datasheet
BSM50GB120DN2
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BSM50GB120DN2 Summary of contents
Page 1
BSM 50 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 50 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...
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BSM 50 GB 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage °C ...
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BSM 50 GB 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 V, ...
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BSM 50 GB 120 DN2 Power dissipation = ( tot C parameter: T 150 °C j 450 W P 350 tot 300 250 200 150 100 Collector current = (T ) ...
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BSM 50 GB 120 DN2 Typ. output characteristics parameter µ ° 100 A 17V 15V 80 I 13V C 11V ...
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BSM 50 GB 120 DN2 Typ. gate charge = ( Gate parameter puls 600 120 ...
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BSM 50 GB 120 DN2 Typ. switching time inductive load , T = 125° par 600 ± ...
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BSM 50 GB 120 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 100 =125° 0.0 0.5 1.0 ...
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BSM 50 GB 120 DN2 Package Outlines Dimensions in mm Weight: 250 g Circuit Diagram 9 Oct-21-1997 ...