BSM50GB120DN2 Eupec GmbH, BSM50GB120DN2 Datasheet

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BSM50GB120DN2

Manufacturer Part Number
BSM50GB120DN2
Description
Manufacturer
Eupec GmbH
Datasheet

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BSM 50 GB 120 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 50 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 78A
CE
I
C
1
Package
HALF-BRIDGE 1
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67076-A2105-A70
+ 150
± 20
1200
1200
2500
156
100
400
F
78
50
20
11
0.3
0.6
Oct-21-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM50GB120DN2 Summary of contents

Page 1

BSM 50 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 50 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...

Page 2

BSM 50 GB 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage °C ...

Page 3

BSM 50 GB 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 V, ...

Page 4

BSM 50 GB 120 DN2 Power dissipation = ( tot C parameter: T 150 °C j 450 W P 350 tot 300 250 200 150 100 Collector current = (T ) ...

Page 5

BSM 50 GB 120 DN2 Typ. output characteristics parameter µ ° 100 A 17V 15V 80 I 13V C 11V ...

Page 6

BSM 50 GB 120 DN2 Typ. gate charge = ( Gate parameter puls 600 120 ...

Page 7

BSM 50 GB 120 DN2 Typ. switching time inductive load , T = 125° par 600 ± ...

Page 8

BSM 50 GB 120 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 100 =125° 0.0 0.5 1.0 ...

Page 9

BSM 50 GB 120 DN2 Package Outlines Dimensions in mm Weight: 250 g Circuit Diagram 9 Oct-21-1997 ...

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