MG400J2YS61A MITSUBISHI, MG400J2YS61A Datasheet

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MG400J2YS61A

Manufacturer Part Number
MG400J2YS61A
Description
Manufacturer
MITSUBISHI
Datasheet

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High Power Switching Applications
Motor Control Applications
Equivalent Circuit
(short circuit and over temperature)
Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
The electrodes are isolated from case.
Low thermal resistance
V
CE (sat)
MG400J2YS61A (600V/400A 2in1)
5
6
7
4
1
2
3
= 1.9 V (typ.)
Signal terminal
1.
5.
OT
G (H)
G (L)
F
F
O
O
2.
6.
C1
E2
F
F
O
O
(H)
(L)
MITSUBISHI IGBT Module
3.
7.
E1/C2
E (H)
E (L)
4.
8.
Open
V
D
MG400J2YS61A
2004-10-01 1/13

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MG400J2YS61A Summary of contents

Page 1

... MG400J2YS61A (600V/400A 2in1) High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) • The electrodes are isolated from case. • Low thermal resistance • 1.9 V (typ.) ...

Page 2

... Package Dimensions (H) Signal Terminal Layout 2.54 Weight: 375 ( ( ( (H) 8. Open ( ( ( ( ( (H) O MG400J2YS61A Open 2004-10-01 2/13 ...

Page 3

... (Note 400 Symbol Test Condition = ⎯ 300 ± (Fo MG400J2YS61A Unit °C °C °C V N·m Min Typ. Max Unit ⎯ ⎯ +3/−4 mA ⎯ ⎯ 100 nA ⎯ ...

Page 4

... Symbol Test Condition Inverter IGBT stage R th (j-c) Inverter FRD stage R With silicon compound th (c- 90 90% 10 (off) f MG400J2YS61A Min Typ. Max Unit ⎯ ⎯ 0.057 °C/W ⎯ ⎯ 0.068 ⎯ ⎯ 0.013 °C/W 2004-10-01 4/13 ...

Page 5

... Characteristics Symbol P-N power terminal supply voltage Gate voltage Gate resistance Switching frequency may not be output even under error conditions. O Min Typ. Max ⎯ V 300 375 ⎯ ⎯ R 7.5 G ⎯ ⎯ MG400J2YS61A Unit V V Ω kHz 2004-10-01 5/13 ...

Page 6

... V 200 100 Collector-emitter voltage V I – 400 Common emitter 125° 300 200 100 Collector-emitter voltage V MG400J2YS61A ( (V) CE 2004-10-01 6/13 ...

Page 7

... Common emitter Tj = 125° Gate-emitter voltage V V – Common emitter Tj = 40° Gate-emitter voltage V MG400J2YS61A GE 400 A 600 A = 200 ( 400 A 600 A = 200 ( 400 A 600 A = 200 A I ...

Page 8

... I – 600 Common emitter = 400 200 125° Gate-emitter voltage V GE (V) I – 400 Common cathode 300 Tj = 125°C 200 100 0 0.0 0.5 1.0 Forward voltage V F (V) MG400J2YS61A GE −40° 25° 25°C 1.5 2.0 2.5 2004-10-01 8/13 ...

Page 9

... Common emitter = 300 7.5 Ω = 25° ± 125° off 1 0.5 0.3 0.1 0.05 0.03 0.01 0 100 200 Collector current I C (A) MG400J2YS61A G t off t d (off (on (off (on 300 400 500 ...

Page 10

... Gate resistance R G (Ω) Switching loss – I 100 Common emitter = 300 7.5 Ω = 25° ± 125° 100 200 Collector current I C (A) MG400J2YS61A off off 300 400 500 2004-10-01 10/13 ...

Page 11

... Forward current I F (A) Edsw – Common emitter = 300 7.5 Ω = 25° ± 125° 0.5 0.3 0.1 0 100 200 Forward current I F (A) MG400J2YS61A – 300 400 500 F 300 400 500 2004-10-01 11/13 ...

Page 12

... Charge Q G (nC) 300000 100000 50000 30000 10000 5000 3000 1000 500 = 0 V 300 MHz Tc = 25°C 100 0 0.1 Collector-emitter voltage V MG400J2YS61A Q G 200 300 400 C – ies C oes C res 1 10 100 (V) CE 2004-10-01 12/ ...

Page 13

... Reverse bias SOA 1000 800 600 400 200 0 0 200 Collector-emitter voltage ( 25°C 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 0.001 0.01 Pulse width t w (s) MG400J2YS61A 400 600 800 – Diode stage Transistor stage 0 2004-10-01 13/13 ...

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