QM30TB-24B MITSUBISHI, QM30TB-24B Datasheet - Page 4

• Manufacturer Part Number: QM30TB-24B
• Manufacturer: MITSUBISHI

10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
FORWARD BIAS SAFE OPERATING AREA
3
2
7
5
4
3
2
7
5
4
3
0
2
7
5
3
2
7
5
3
2
5
3
2
COLLECTOR-EMITTER VOLTAGE V
10
1
0
2
1
0
7
10
3 4 5 7
2
TRANSIENT THERMAL IMPEDANCE
–3
BASE REVERSE CURRENT –I
T
0
NON–REPETITIVE
3
CHARACTERISTIC (TRANSISTOR)
C
4
2
2 3 45 7
=25°C
SWITCHING TIME VS. BASE
5
3
7
4
10
CURRENT (TYPICAL)
5
10
7
1
10
0
10
2
–2
3
1
TIME (s)
2 3 4 5 7
2
2
4
5
3
3
t
t
7
4 5 7
4
s
f
10
5
V
I
I
7
B1
2
C
CC
10
=30A
10
=60mA
2
=600V
–1
2
3
T
T
10
4
2
j
j
=25°C
=125°C
5
1
3
B2
7
4
10
(A)
CE
5
2 3
7
3
(V)
10
2
0
100
10
10
10
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
2
1
0
0.4
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
I
T
B2
MITSUBISHI TRANSISTOR MODULES
j
COLLECTOR-EMITTER REVERSE
=125°C
20
CHARACTERISTICS) (TYPICAL)
=2.5A
200
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
COLLECTOR
DISSIPATION
0.8
40
400
60
1.2
–V
600
CEO
80 100 120 140
800
(V)
1.6
QM30TB-24B
SECOND
BREAKDOWN
AREA
1000
T
T
j
j
=25°C
=125°C
C
2.0
INSULATED TYPE
1200
( C)
CE
1400
160
(V)
2.4
Feb.1999