NTD3055L104-1 ON Semiconductor, NTD3055L104-1 Datasheet

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NTD3055L104-1

Manufacturer Part Number
NTD3055L104-1
Description
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD3055L104-1

Dc
0104

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NTD3055L104
Power MOSFET
12 Amps, 60 Volts, Logic Level
N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
1. When surface mounted to an FR4 board using 1 pad size,
2. When surface mounted to an FR4 board using the minimum recommended
MAXIMUM RATINGS
August, 2004 − Rev. 4
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage, Continuous
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance, − Junction−to−Case
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
Bridge Circuits
Pb−Free Packages are Available
Lower R
Lower V
Tighter V
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Power Supplies
Converters
Power Motor Controls
Semiconductor Components Industries, LLC, 2004
(Cu Area 1.127 in
pad size, (Cu Area 0.412 in
Derate above 25 C
Energy − Starting T
(V
I
Purposes, 1/8 from case for 10 seconds
L(pk)
DD
− Non−Repetitive (t
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
− Continuous @ T
− Continuous @ T
− Single Pulse (t
= 11 A, V
= 25 Vdc, V
DS(on)
DS(on)
SD
Specification
DS
2
Rating
GS
).
= 60 Vdc)
J
p
= 5.0 Vdc, L = 1.0 mH
(T
= 25 C
v10 ms)
A
A
p
J
GS
v10 ms)
= 25 C
= 100 C
= 25 C unless otherwise noted)
A
A
A
2
= 10 MW)
).
= 25 C
= 25 C (Note 1)
= 25 C (Note 2)
Symbol
T
V
V
R
R
R
J
V
V
E
I
P
DGR
, T
T
DSS
DM
I
I
qJC
qJA
qJA
GS
GS
D
D
AS
D
L
stg
−55 to
Value
+175
"15
"20
0.32
3.13
71.4
100
260
2.1
1.5
60
60
12
10
45
48
61
1
W/ C
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
W
W
W
C
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1 2
1
V
2
(BR)DSS
60 V
3
3
55L104
A
Y
W
ORDERING INFORMATION
4
4
G
http://onsemi.com
CASE 369C
CASE 369D
STYLE 2
STYLE 2
DPAK−3
DPAK
R
= Device Code
= Assembly Location
= Year
= Work Week
N−Channel
DS(on)
104 mW
D
Publication Order Number:
TYP
S
Gate
Gate
DIAGRAMS
MARKING
1
1
NTD3055L104/D
Drain
Drain
Drain
Drain
4
4
2
2
I
D
12 A
3
Source
3
Source
MAX

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NTD3055L104-1 Summary of contents

Page 1

... A N−Channel MARKING DIAGRAMS 4 Drain 4 DPAK CASE 369C STYLE Drain Gate Source 4 Drain 4 DPAK−3 CASE 369D STYLE Gate Drain Source 55L104 = Device Code A = Assembly Location Y = Year W = Work Week ORDERING INFORMATION Publication Order Number: NTD3055L104/D ...

Page 2

... Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD3055L104 NTD3055L104G NTD3055L104−1 NTD3055L104−1G NTD3055L104T4 NTD3055L104T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD3055L104 ( unless otherwise noted Vdc ...

Page 3

... Gate−to−Source Voltage 1 1.6 1.4 1.2 1 0.8 0.6 −50 − 100 T , JUNCTION TEMPERATURE ( C) J Figure 5. On−Resistance Variation with Temperature NTD3055L104 4 3 100 1 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2 ...

Page 4

... GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) NTD3055L104 POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET ...

Page 5

... T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For NTD3055L104 1000 100 t d(off d(on ...

Page 6

... V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 I Figure 14. Diode Reverse Recovery Waveform NTD3055L104 SAFE OPERATING AREA 100 STARTING JUNCTION TEMPERATURE ( C) J Figure 12. Maximum Avalanche Energy versus ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD3055L104 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 8

... K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD3055L104/D ...

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