QM200DY-2HB Mitsumi Electronics, Corp., QM200DY-2HB Datasheet - Page 4

• Manufacturer Part Number: QM200DY-2HB
• Manufacturer: Mitsumi Electronics, Corp.

0.10
0.08
0.06
0.04
0.02
10
10
10
10
10
10
10
10
FORWARD BIAS SAFE OPERATING AREA
0
10
7
5
3
2
7
5
3
2
7
5
3
2
10
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
10
TRANSIENT THERMAL IMPEDANCE
–3
–1
V
I
I
BASE REVERSE CURRENT –I
0
0
B1
CHARACTERISTIC (TRANSISTOR)
C
CC
NON–REPETITIVE
T
=200A
2
2
2
C
=0.4A
=600V
SWITCHING TIME VS. BASE
=25°C
2 3 4 5 7
3
3
3
T
T
j
j
=25°C
=125°C
5
5
5
CURRENT (TYPICAL)
7
7
7
10
10
10
t
t
f
s
1
–2
1
TIME (s)
2
2
10
3
3
0
5
5
1ms
7
7
10
2 3 4 5 7
10
–1
2
200µs
2
2
3
3
100µs
B2
50µs
5
5
(A)
CE
7
7
10
10
(V)
10
1
3
0
400
300
200
100
100
10
10
10
90
80
70
60
50
40
30
20
10
0
0
7
5
4
3
2
7
5
4
3
2
COLLECTOR-EMITTER REVERSE VOLTAGE
3
2
1
REVERSE BIAS SAFE OPERATING AREA
0.4
COLLECTOR-EMITTER VOLTAGE V
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
j
=125°C
20
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
DISSIPATION
COLLECTOR
T
T
0.8
j
j
400
=25°C
=125°C
40
I
HIGH POWER SWITCHING USE
B2
=–8A
60
1.2
–V
CEO
800
80
QM200DY-2HB
(V)
1.6
100 120
SECOND
BREAKDOWN
AREA
I
B2
1200
=–4A
C
2.0
INSULATED TYPE
( C)
140
CE
1600
160
2.4
(V)
Feb.1999