PDM505HA Nihon Inter Electronics (NIEC), PDM505HA Datasheet - Page 3

• Manufacturer Part Number: PDM505HA
• Manufacturer: Nihon Inter Electronics (NIEC)

■定格・特性曲線
Fig. 1 Typical Output Characteristics
Fig. 4 Typical Capacitance
Fig. 4
Fig. 7 Typical Switching Time
Fig. 7
Fig. 10 Maximum Safe Operating Area
1000
500
200
100
200
100
0.5
0.2
80
60
40
20
12
10
50
20
10
50
20
10
0
8
6
4
2
0
5
2
1
0
1
1
1
Vs. Drain-Source Voltage
Vs. Drain Current
Operation in this area
is limited by R
2
DRAIN TO SOURCE VOLTAGE V
DRAIN TO SOURCE VOLTAGE V
R
DRAIN TO SOURCE VOLTAGE V
2
2
2
G
=5Ω V
5
DRAIN CURRENT I
T
10
4
DD
C
5
5
=25℃ T
=250V T
DS
20
(on)
10
10
6
T
j
=150℃MAX Single Pulse
t
C
d
50 100
=25℃ 250μs Pulse Test
C
C
(off)
C
=25℃ 80μs Pulse Test
t
iss
t
oss
r
f
20
20
D
8
V
(A)
GS
200
=0V f=1MHz
DS
DS
100μs
DS
10ms
1ms
V
10
(V)
(V)
(V)
GS
50
50
10μs
8V
6V
5V
=10V
t
500
d
(on)
DC
1000
100
100
12
Fig. 2 Typical Drain-Source On-Voltage
Fig. 2
Fig. 5 Typical Gate Charge
Fig. 5
Fig. 8 Typical Source-Drain Diode Forward
Fig. 8
120
100
16
12
80
60
40
20
8
6
4
2
0
8
4
0
0
0
0
0
Fig. 11-1
Normalized Transient Thermal
impedance(MOSFET)
Fig. 11-2
Normalized Transient Thermal
impedance(DIODE)
Vs. Gate-Source Voltage
Vs. Gate-Source Voltage
Characteristics
100
SOURCE TO DRAIN VOLTAGE V
0.3
GATE TO SOURCE VOLTAGE V
TOTAL GATE CHRAGE Q
4
─ 327 ─
200
0.6
300
0.9
V
8
T
DD
C
=25℃ 250μs Pulse Test
T
=100V
j
250V
400V
=125℃
400
1.2
250μs Pulse Test
g
T
(nC)
12
j
=25℃
GS
SD
500
(V)
1.5
(V)
I
D
=50A
I
0.05
0.02
0.01
0.05
0.02
0.01
D
0.5
0.2
0.1
0.5
0.2
0.1
25A
15A
=35A
2
1
10
2
1
10
600
1.8
-5
-5
16
Fig. 3 Typical Drain-Source On Voltage
Fig. 3
Fig. 6 Typical Switching Time
Fig. 6
Fig. 9 Typical Reverse Recovery Characteristics
10
10
0.05
500
200
100
0.5
0.2
0.1
-4
-4
16
12
50
20
10
8
4
0
5
2
1
5
-40
2
0
Vs. Junction Temperature
Vs. Series Gate impedance
10
10
I
PULSE DURATION t (s)
PULSE DURATION t (s)
D
100
-3
-3
=25A V
SERIES GATE IMPEDANCE R
JUNCTION TEMPERATURE T
5
0
200
10
10
DD
10
=250V T
-2
-2
40
-dis/dt (A/ μ s)
I
300
20
V
S
=50A I
GS
t
I
10
10
rr
R
C
=10V 250μs Pulse Test
=25℃ 80μs Pulse Test
80
-1
-1
Per Unit Base
R
1 Shot Pulse
Per Unit Base
R
1 Shot Pulse
400
th(j-c)
th(j-c)
50
S
=25A T
=0.36℃/W
=2.0℃/W
G
j
( )
120
I
( )
1
1
℃
Ω
D
500
=50A
100
t
t
t
t
j
d
r
d
f
=125℃
(off)
(on)
25A
15A
160
200
600
10
10