BSM300GA120DN2E3166 Infineon Technologies AG, BSM300GA120DN2E3166 Datasheet - Page 8

• Manufacturer Part Number: BSM300GA120DN2E3166
• Description: 1200V/430A IGBT power module
• Manufacturer: Infineon Technologies AG

Forward characteristics of fast recovery
reverse diode
Semiconductor Group
parameter: T
I
F
600
500
450
400
350
300
250
200
150
100
50
A
0
0.0
j
0.5
I
F
= f(V
1.0
T
j
F
=125°C
)
1.5
2.0
T
j
=25°C
V
V
F
3.0
8
Transient thermal impedance
Z
parameter: D = t
Z
thJC
th JC
K/W
10
10
10
10
10
= ( t
-1
-2
-3
-4
0
10
-5
p
)
single pulse
BSM300GA120DN2E3166
10
p
-4
/ T
10
-3
10
-2
Diode
D = 0.50
10
Mar-29-1996
t
-1
p
0.20
0.10
0.05
0.02
0.01
s
10
0