QM150DY-2HK Mitsumi Electronics, Corp., QM150DY-2HK Datasheet - Page 4

• Manufacturer Part Number: QM150DY-2HK
• Manufacturer: Mitsumi Electronics, Corp.

0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
10
10
10
10
10
10
10
10
7
5
4
3
2
7
5
4
3
2
FORWARD BIAS SAFE OPERATING AREA
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
10
0
10
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
–1
0
TRANSIENT THERMAL IMPEDANCE
–3
T
NON–REPETITIVE
0
BASE REVERSE CURRENT –I
CHARACTERISTIC (TRANSISTOR)
C
2
2
2
=25°C
SWITCHING TIME VS. BASE
2
3
3
3
t
4
4
4
f
3 4 5
5
5
5
CURRENT (TYPICAL)
7
7
7
10
10
10
1
1
–2
7
TIME (s)
2
2
2
10
3
3
4
4
0
5
5
7
7
10
2 3 4 5 7
10
V
I
I
100µs
C
B1
t
T
T
–1
2
CC
w
=150A
j
j
=25°C
=125°C
=3A
=50µs
2
2
=600V
3
3
t
B2
s
4
4
5
5
(A)
CE
7
7
10
(V)
10
10
1
3
0
320
280
240
200
160
120
100
10
10
10
10
80
40
90
80
70
60
50
40
30
20
10
0
0
7
5
3
2
7
5
3
2
7
5
3
2
COLLECTOR-EMITTER REVERSE VOLTAGE
REVERSE BIAS SAFE OPERATING AREA
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
20
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
200
0.4
40
HIGH POWER SWITCHING USE
T
60
400
0.8
j
=125°C
–V
I
CEO
B2
80
=–5A
QM150DY-2HK
600
1.2
(V)
100 120
SECOND
BREAKDOWN
AREA
T
T
800
j
j
I
C
=25°C
=125°C
1.6
B2
INSULATED TYPE
( C)
140
=–2A
CE
1000
160
2.0
(V)
Feb.1999