40MT120UHT International Rectifier Corp., 40MT120UHT Datasheet

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40MT120UHT

Manufacturer Part Number
40MT120UHT
Description
Manufacturer
International Rectifier Corp.
Datasheet
"HALF-BRIDGE" IGBT MTP
• Positive V
• 10µs Short Circuit Capability
• HEXFRED
• Low Diode V
• Square RBSOA
• Aluminum Nitride DBC
• Optional SMT Thermistor (NTC)
• Very Low Stray Inductance Design for
• UL approved (file E78996)
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
• Direct Mounting to Heatsink
• PCB Solderable Terminals
www.irf.com
Absolute Maximum Ratings
Features
Benefits
V
I
I
I
I
I
V
V
P
UltraFast Non Punch Through (NPT)
Technology
UltraSoft Reverse Recovery
High Speed Operation
Optimized for Welding, UPS and SMPS
Applications
Operation
Operation
C
CM
LM
F
FM
CES
GE
ISOL
D
Parameters
Collector-to-Emitter Breakdown Voltage
Continuos Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT)
CE(ON)
TM
F
Antiparallel Diodes with
Temperature Coefficient
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 25°C
= 105°C
= 105°C
= 25°C
= 100°C
MMTP
UltraFast NPT IGBT
Max
1200
2500
± 20
160
160
160
463
185
80
40
21
40MT120UH
V
I27126 rev. C 02/03
CES
T
I
C
C
= 25°C
= 80A
= 1200V
Units
W
V
A
V
1

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40MT120UHT Summary of contents

Page 1

IGBT MTP Features UltraFast Non Punch Through (NPT) • Technology • Positive V Temperature Coefficient CE(ON) • 10µs Short Circuit Capability TM • HEXFRED Antiparallel Diodes with UltraSoft Reverse Recovery • Low Diode V F • Square RBSOA • ...

Page 2

I27126 rev. C 02/03 Electrical Characteristics @ T Parameters V Collector-to-Emitter Breakdown Voltage 1200 (BR)CES ∆V / Temperature Coeff. of (BR)CES ∆T Breakdown Voltage J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V / Temperature Coeff. ...

Page 3

... Diode Characteristics @ T Parameters V Diode Forward Voltage Drop FM E Reverse Recovery Energy of the Diode rec trr Diode Reverse Recovery Time Irr Peak Reverse Recovery Current Thermistor Specifications (40MT120UHT only) Parameters (1) R Resistance 0 (1) (2) β Sensitivity index of the thermistor material ( are thermistor's temperatures ...

Page 4

I27126 rev. C 02/03 100 (°C) Fig Maximum DC Collector Current vs. Case Temperature 1000 100 10 1 0.1 0. 100 V CE ...

Page 5

18V 140 VGE = 15V VGE = 12V 120 VGE = 10V VGE = 8.0V 100 (V) Fig Typ. IGBT Output Characteristics T ...

Page 6

I27126 rev. C 02/ (V) Fig Typical V vs -40° ...

Page 7

E ON 1200 600 E OFF (A) Fig Typ. Energy Loss vs 125°C; L=250µ 5Ω 15V ...

Page 8

I27126 rev. C 02/ (A) Fig Typical Diode 125° 200 ...

Page 9

Cies Coes Cres (V) Fig. 21- Typ. Capacitance vs 0V 1MHz GE ...

Page 10

I27126 rev. C 02/ 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 0.0001 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 1E-006 1E-005 Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 ...

Page 11

DUT 0 1K Fig. CT.1 - Gate Charge Circuit (turn-off) Driver D C DUT Fig. CT.3 - S.C. SOA Circuit www.irf.com VCC Fig. CT.2 - RBSOA Circuit diode clamp / DUT - 5V 900V Rg Fig. CT.4 ...

Page 12

I27126 rev. C 02/03 Outline Table Note: unused terminals are not assembled in the package 12 Electrical Circuit Dimensions in millimetres Resistance in ohms www.irf.com ...

Page 13

Ordering Information Table Device Code WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com 40 MT 120 ...

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