FZ1200R33KL2 Eupec GmbH, FZ1200R33KL2 Datasheet

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FZ1200R33KL2

Manufacturer Part Number
FZ1200R33KL2
Description
Hochstzulassige Werte / Maximum rated values
Manufacturer
Eupec GmbH
Datasheet
1.FZ1200R33KL2.pdf (9 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FZ1200R33KL2
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
FZ1200R33KL2
Quantity:
55
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FZ1200R33KL2C_B5
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
FZ1200R33KL2C_B5
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Spitzenverlustleistung der Diode
maximum power dissipation diode
Isolations-Prüfspannung
insulation test voltage
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Gateladung
gate charge
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: J. Biermann
approved by: Christoh Lübke; 2002-04-30
Technische Information / Technical Information
2
t - value, Diode
T
T
T
T
t
T
t
V
T
RMS, f = 50 Hz, t = 1 min.
RMS, f = 50 Hz, Q
I
I
I
f = 1MHz,T
f = 1MHz,T
V
V
date of publication : 2002-04-23
revision: 3
FZ 1200 R 33 KL2
C
C
C
P
P
V
j
j
C
C
C
R
j
CE
CE
GE
= 1 ms, T
= 1 ms
= 1200A, V
= 1200A, V
= 120 mA, V
= 25°C
= -25°C
= 125°C
=25°C, Transistor
= 80°C
= 25 °C
= 0V, t
= 3300V, V
= 0V, V
= -15V ... + 15V, V
p
vj
vj
= 10ms, T
GE
C
= 25°C,V
= 25°C,V
GE
GE
= 80°C
= 20V, T
CE
GE
= 15V, Tvj = 25°C
= 15V, T
= V
= 0V, T
PD
£ 10 pC (acc. to IEC 1287)
GE
Vj
CE
CE
1 (9)
, T
vj
= 125°C
CE
= 25V, V
= 25V, V
vj
= 25°C
vj
vj
= 125°C
= 1800V
= 25°C
= 25°C
GE
GE
= 0V
= 0V
V
V
I
V
P
V
V
V
C,nom.
I
I
C
C
I
I
P
CRM
CE sat
GE(th)
Q
FRM
CES
GES
I
ISOL
ISOL
GES
RQM
CES
I
I
2
C
res
tot
F
ies
G
t
vorläufiges Datenblatt
preliminary datasheet
min.
4,2
-
-
-
-
-
-
-
440.000
+/- 20V
1.500
6.000
2.600
3300
3300
1200
2300
2400
1200
2400
typ.
14,7
3,00
3,70
145
5,1
22
8
-
-
FZ1200R33KL2_V Rev3.xls
max.
3,65
4,45
400
6,0
5
-
-
-
A
kW
kW
mA
µC
nA
nF
nF
V
A
A
A
V
A
A
V
V
V
V
V
2
s

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FZ1200R33KL2 Summary of contents

Page 1

... C I 2400 A CRM P 14,7 kW tot V +/- 20V V GES I 1200 2400 A FRM 2 2 440.000 1.500 kW RQM V 6.000 V ISOL V 2.600 V ISOL min. typ. max 3,00 3, sat - 3,70 4, 4,2 5,1 6,0 V GE(th 145 - nF ies res µ CES 400 nA GES FZ1200R33KL2_V Rev3.xls ...

Page 2

... E - 2700 - mWs 1590 - mWs off I - 5200 - sCE CC'+EE' min. typ. max 2,60 3, 2,45 3, 1180 - 1300 - 650 - µ 1200 - µ 430 - mWs rec - 1150 - mWs FZ1200R33KL2_V Rev3.xls ...

Page 3

... W/m*K Paste grease terminals M4 terminals M8 3 (9) vorläufiges Datenblatt preliminary datasheet min. typ. max 0,0085 K/W thJC - - 0,0170 K 0,006 - K/W thCK 150 ° -40 - 125 ° -40 - 125 °C stg AlSiC AlN 32,2 mm 19,1 mm > 400 1500 g FZ1200R33KL2_V Rev3.xls ...

Page 4

... Output characteristic (typical) 2400 2000 VGE = 8V VGE = 9V VGE = 10V VGE = 12V 1600 VGE = 15V VGE = 20V 1200 800 400 0 0,0 0,5 1,0 1,5 FZ 1200 R 33 KL2 15V GE 2,0 2,5 3,0 3,5 4,0 4 2,0 2,5 3,0 3,5 4,0 4 (9) vorläufiges Datenblatt preliminary datasheet ) CE 5,0 5,5 6,0 6,5 7 125°C 5,0 5,5 6,0 6,5 7,0 FZ1200R33KL2_V Rev3.xls ...

Page 5

... Forward characteristic of inverse diode (typical) 2400 Tj = 25° 125°C 2000 1600 1200 800 400 0 0,0 0,5 FZ 1200 R 33 KL2 T = 25° 125° [V] GE 1,0 1,5 2,0 2 (9) vorläufiges Datenblatt preliminary datasheet 20V 3,0 3,5 4,0 FZ1200R33KL2_V Rev3.xls ...

Page 6

... G off I = 1200 330 nF [ (9) vorläufiges Datenblatt preliminary datasheet ) , rec C = 330 nF 1800V 125° 1800 2100 2400 ) , rec G = 1800V , T = 125° FZ1200R33KL2_V Rev3.xls ...

Page 7

... FZ 1200 R 33 KL2 IC,Modul IC,Chip 1000 1500 2000 V [V] CE 1000 1500 2000 V [ (9) vorläufiges Datenblatt preliminary datasheet R = 2,7W 330 nF G,off 125°C vj 2500 3000 3500 T = 125°C vj 2500 3000 3500 FZ1200R33KL2_V Rev3.xls ...

Page 8

... Zth:IGBT Zth:Diode 0,01 0,001 0,0001 0,001 i r [K/kW] : IGBT i t [sec] : IGBT i r [K/kW] : Diode i t [sec] : Diode i FZ 1200 R 33 KL2 0,01 0,1 t [sec 1,56 4,25 0,0068 0,0642 3,11 8,49 0,0068 0,0642 8 (9) vorläufiges Datenblatt preliminary datasheet (t) thJC 1,26 1,44 0,3209 2,0212 2,52 2,88 0,3209 2,0212 FZ1200R33KL2_V Rev3.xls ...

Page 9

... Technische Information / Technical Information IGBT-Module IGBT-Modules Gehäusemaße / Schaltbild Package outline / Circuit diagram FZ 1200 R 33 KL2 9 (9) vorläufiges Datenblatt preliminary datasheet FZ1200R33KL2_V Rev3.xls ...

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