APT5010JVRU3 Advanced Power Technology, APT5010JVRU3 Datasheet - Page 3

• Manufacturer Part Number: APT5010JVRU3
• Description: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
• Manufacturer: Advanced Power Technology

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
100
100
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
80
60
40
20
50
40
30
20
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
0
V
0
V
APT5010JVRU3
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-25
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
T
GS
J
V GS =7V, 8V, 10V & 15V
T
, JUNCTION TEMPERATURE ( C)
50
50
C
= 10V
D
T J = +125 C
, CASE TEMPERATURE ( C)
T J = +25 C
[Cont.]
2
0
100
25
T J = +125 C
75
T J = +25 C
T J = -55 C
50
4
150
100
75
4.5V
5.5V
T J = -55 C
100 125 150
5V
4V
6V
6
200
125
150
250
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
0
V
0
DS
FIGURE 5, R
V
V GS =7V, 8V & 10V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
20
D
= 10V @ 0.5 I
NORMALIZED TO
, JUNCTION TEMPERATURE ( C)
2
T
, DRAIN CURRENT (AMPERES)
V GS =10V
C
, CASE TEMPERATURE ( C)
0
0
40
4
DS
25
25
(ON) vs DRAIN CURRENT
D
[Cont.]
V GS =15V
60
50
50
6
75
75 100 125 150
80
8
V GS =20V
100 125 150
100
4.5V
5.5V
10
5V
4V
6V
120
12