BSM50GD120DN2G Siemens Semiconductor Group, BSM50GD120DN2G Datasheet - Page 5

• Manufacturer Part Number: BSM50GD120DN2G
• Description: IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
Typ. transfer characteristics
I
Semiconductor Group
parameter: t
parameter: t
C
C
I
I
C
C
= f (V
= f (V
100
100
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
A
A
0
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 80 µs, V
= 80 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f (V
100
80
70
60
50
40
30
20
10
A
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 80 µs, T
1
BSM 50 GD 120 DN2G
2
j
= 125 °C
3
V
Aug-23-1996
V
CE
5