QM75TX-HB MITSUBISHI, QM75TX-HB Datasheet - Page 4

• Manufacturer Part Number: QM75TX-HB
• Manufacturer: MITSUBISHI

10
10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
–1
FORWARD BIAS SAFE OPERATING AREA
7
5
4
3
2
7
5
4
3
2
0
7
5
3
2
7
5
3
2
7
5
3
2
10
10
1
0
10
10
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
TRANSIENT THERMAL IMPEDANCE
0
0
0
–3
T
NON-REPETITIVE
BASE REVERSE CURRENT –I
CHARACTERISTIC (TRANSISTOR)
C
2
2 3 5 7
2
=25°C
SWITCHING TIME VS. BASE
2 3 4 5 7
3
3
4
5
5
CURRENT (TYPICAL)
7
7
10
10
10
1
–2
1
TIME (s)
2
2
2
10
t
t
3
3
3
s
f
4
t
1
w
5
5
5
=50µs
7
7
7
V
I
I
10
C
2 3 4 5 7
B1
10
10
CC
=75A
=150mA
–1
=300V
2
2
T
T
2
2
j
j
=25°C
=125°C
3
3
100µs
B2
4
5
5
(A)
CE
7
7
10
10
(V)
10
2
0
3
160
140
120
100
80
60
40
20
0
100
10
10
10
0 100
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
7
5
4
3
2
7
5
4
3
2
T
REVERSE BIAS SAFE OPERATING AREA
2
1
0
COLLECTOR-EMITTER VOLTAGE V
j
0
0
=125°C
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
20
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
200
MEDIUM POWER SWITCHING USE
DISSIPATION
0.4
COLLECTOR
T
T
40
j
j
300 400 500
=25°C
=125°C
I
B2
60
=–3.5A
0.8
–V
CEO
80 100 120 140
(V)
1.2
I
B2
600 700
SECOND
BREAKDOWN
AREA
QM75TX-HB
=–2.0A
C
1.6
INSULATED TYPE
( C)
800
CE
160
2.0
(V)
Feb.1999