PDMB50A6 Nihon Inter Electronics (NIEC), PDMB50A6 Datasheet
PDMB50A6
Manufacturer Part Number
PDMB50A6
Description
Manufacturer
Nihon Inter Electronics (NIEC)
Datasheet
1.PDMB50A6.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PDMB50A6
Manufacturer:
SEMIKRON
Quantity:
1 000
Part Number:
PDMB50A6
Quantity:
60
IGBT
CIRCUIT
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Switching Time
Forward Current
Peak Forward Voltage
Reverse Recovery Time
Thermal Impedance
MAXMUM RATINGS
ELECTRICAL CHARACTERISTICS
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic
MODULE
MODULE
MODULE
MODULE
Rise Time
Turn-on Time
Fall Time
Turn-off Time
Characteristic
Characteristic
Module Base to Heatsink
Bus Bar to Main Terminals
Item
Item
(Tc=25 C)
Dual 50A 600V
Dual 50A 600V
Dual 50A 600V
Dual 50A 600V
Symbol
DIODE
IGBT
1 ms
1 ms
DC
DC
V
t
rr
F
(Tc=25 C)
Symbol
Symbol
Symbol
Symbol
V
V
Cies
V
V
F
I
I
R
V
CE(sat)
I
T
GE(th)
t
I
CES
GES
t
I
P
t
t
I
F
T
TOR
on
off
I
CES
GES
FM
th(j-c)
CP
ISO
r
stg
f
C
F
=50A,V
C
j
Test Condition
I
F
V
V
I
V
V
V
R
R
V
=50A,V
GE
C
CE
GE
CE
CE
CC
L
G
GE
=50A,V
=-10V,di/dt=50A/
= 6 ohm
= 15.1 ohm
=600V,V
=+/- 20V,V
=5V,I
=10V,V
= 300V
= +/- 15V
Test Condition
Junction to Case
Test Condition
GE
C
GE
=0V
=50mA
OUTLINE DRAWING
GE
=15V
(Tc=25 C)
GE
=0V,f=1MHz
CE
=0V
=0V
s
PDMB50A6
Rated Value
-40 to +150
-40 to +125
+/ - 20
2500
600
100
250
100
50
50
2
Min.
Min.
-
-
-
-
Min.
PDMB50A6
PDMB50A6
PDMB50A6
PDMB50A6
4.0
-
-
-
-
-
-
-
-
Typ.
Typ.
0.15
1.9
5,000
Typ.
-
-
Approximate Weight : 220g
0.15
0.25
0.45
2.0
0.2
-
-
-
Dimension(mm)
4- fasten- tab No 110
Max.
Max.
0.25
Max.
2.4
0.5
1.0
0.35
1.0
1.0
2.5
8.0
0.3
0.4
0.7
-
Unit
N m
Unit
Unit
Unit
Unit
C/W
mA
pF
W
V
V
A
V
V
A
V
V
C
C
A
s
s
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PDMB50A6 Summary of contents
Page 1
... =50A,V =-10V,di/dt=50A Symbol Test Condition IGBT R Junction to Case th(j-c) DIODE PDMB50A6 PDMB50A6 PDMB50A6 PDMB50A6 OUTLINE DRAWING Dimension(mm) Approximate Weight : 220g PDMB50A6 600 +/ - 20 50 100 250 -40 to +150 -40 to +125 2500 2 Min. Typ =15V - 2.0 =50mA 4.0 - ...
Page 2
... PDMB50A6 Fig.1- Output Characteristics 100 V =20V 12V GE 15V Collector to Emitter Voltage V Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage 16 I =20A 100A C 14 50A Gate to Emitter Voltage V Fig.5- Capacitance vs. Collector to Emitter Voltage 20000 ...
Page 3
... PDMB50A6 Fig.7- Series Gate Impedance vs. Switching Time 5 V =300V CC I =50A C V =±15V G T =25℃ 0.5 0.2 0.1 0. Series Gate Impedance R Fig.9- Reverse Recovery Characteristics 500 I =50A F T =25℃ C 200 trr 100 RrM 2 0 100 200 -di/dt (A/μ ...