CM100DY-12H MITSUBISHI, CM100DY-12H Datasheet
CM100DY-12H
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CM100DY-12H Summary of contents
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... Dia. Dia. 6.5 R 0.16 4 Metric M5 MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de- signed for use in switching appli- cations. Each module consists of two IGBTs in a half-bridge configu- ration with each transistor having a reverse-connected super-fast re- covery free-wheel diode ...
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... C unless otherwise specified j Symbol Test Conditions R Per IGBT th(j-c) R Per FWDi th(j-c) R Per Module, Thermal Grease Applied th(c-f) MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Symbol CM100DY-12H T –40 to 150 j T –40 to 125 stg V 600 CES V 20 GES I 100 C I 200* ...
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... EMITTER CURRENT (AMPERES) E MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL 15V 25° 125° 100 150 ...
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... IMPEDANCE CHARACTERISTICS (FWDi Single Pulse Per Unit Base = R = 0.7 C/W th(j- TIME, (s) MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Sep.1998 ...