MIG200Q2CSB1X MITSUBISHI, MIG200Q2CSB1X Datasheet

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... MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG200Q2CSB1X (1200V/200A 2in1) High Power Switching Applications Motor Control Applications • Integrates inverter power circuits and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. • ...

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... Package Dimensions 1. FO (L) 2. GND ( ( ( (L) D (H) D MIG200Q2CSB1X Unit (H) 6. GND (H) 2005-04-01 2/10 ...

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... Signal Terminal Layout 1. FO (L) 2. GND ( ( ( (L) D (H) D MIG200Q2CSB1X Unit (H) 6. GND (H) 2005-04-01 3/10 ...

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... 600 200 (on ↔ 25°C, Inductive load T j (Note 1) t off t c (off) MIG200Q2CSB1X Symbol Ratings Unit V 900 1200 V CES I 200 200 2010 150 °C ...

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... off (OC Case temperature OTr UV ⎯ UVr = Symbol Test Condition IGBT R th (j-c) FRD R Compound is applied th (c-f) MIG200Q2CSB1X Min Typ. Max Unit ⎯ ⎯ 1.4 1.6 1.8 V 2.2 2.5 2 ⎯ ⎯ 0.1 ⎯ ⎯ 320 A ⎯ ...

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... I Waveform C V Waveform CE Intelligent power module V D 0.1 µF 15 kΩ µF GND V D 0.1 µF 15 kΩ µF GND 10% 10 (off) t off MIG200Q2CSB1X C1 OUT V S GND V CC E1/C2 OUT GND 1 90% 10% 10 (on) ...

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... Waveform IN 0 Symbol Test Condition V P-N Power terminal -GND Signal terminal PWM Control Switching time test circuit tdead (see page.6) (Note dead dead MIG200Q2CSB1X Min Typ. Max Unit ⎯ 600 800 V 13.5 15 16.5 V ⎯ ⎯ 20 kHz ⎯ ⎯ µs 5 2005-04-01 7/10 ...

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... Collector current I 100 5 3 Irr °C ° Forward current I MIG200Q2CSB1X I – Common emitter 125° ( off t c (off (on 125 °C ...

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... 150 Carrier frequency fc (kHz) Reverse bias SOA 400 OC 320 240 160 < = 125° 15V 200 400 600 Collector-emitter voltage V 10 MIG200Q2CSB1X (H) – 800 1000 1200 1400 (V) CE 2005-04-01 9/10 ...

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... 25° 125° 100 150 200 Collector current I (A) C Turn off loss – I 100 250 0 50 100 Collector current I MIG200Q2CSB1X C = 600 L-LOAD : 25° 125°C 150 200 250 (A) C 2005-04-01 10/10 ...