CM200HA-24H MITSUBISHI, CM200HA-24H Datasheet - Page 2

• Manufacturer Part Number: CM200HA-24H
• Manufacturer: MITSUBISHI

Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current (T
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 Terminal
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
c
c
= 25 C)
= 25 C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
150 C)
c
= 25 C)
j
= 25 C unless otherwise specified
j
= 25 C unless otherwise specified
V
Symbol
V
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
GE(th)
C
V
C
d(on)
d(off)
CES
GES
th(j-c)
th(j-c)
th(c-f)
Q
j
Q
t
oes
EC
t
res
t
ies
rr
= 25 C unless otherwise specified
r
G
f
rr
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
C
CC
V
GE1
= 200A, V
I
I
E
E
j
= 600V, I
) does not exceed T
V
V
V
= 200A, di
= 200A, di
I
I
C
V
C
CC
CE
GE
I
= V
E
GE
= 20mA, V
= 200A, V
= 200A, V
Test Conditions
Test Conditions
Test Conditions
= V
= 600V, I
= V
GE2
= 0V, V
Per FWDi
Per IGBT
GE
C
CES
GES
= 200A, V
= 15V, R
E
E
Symbol
= 15V, T
V
V
/dt = –400A/ s
/dt = –400A/ s
V
T
I
I
, V
, V
CES
GES
CM
EM
P
CE
I
I
GE
T
stg
–
–
–
–
iso
CE
C
C
E
GE
j(max)
c
j
GE
CE
= 200A,
= 10V
= 15V
= 10V
= 0V
G
= 0V
= 0V
rating.
j
GE
= 150 C
= 1.6
= 15V
HIGH POWER SWITCHING USE
CM600HU-12H
Min.
Min.
Min.
-40 to 150
-40 to 125
1.96~2.94
0.98~1.47
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
1.96~2.94
–
–
–
–
MITSUBISHI IGBT MODULES
1200
1500
2500
400*
400*
200
200
400
20
1000
CM200HA-24H
Typ.
Typ.
Typ.
–
–
6.0
2.5
2.25
–
–
–
–
–
–
–
–
–
1.49
–
–
–
INSULATED TYPE
250
400
300
350
250
40
14
Max.
Max.
Max.
1.0
0.5
7.5
3.4**
–
–
3.4
8
–
0.085
0.18
0.040
Amperes
Amperes
Amperes
Amperes
Grams
Watts
N · m
N · m
N · m
Units
Vrms
Units
Units
Units
Volts
Volts
Sep.1998
Volts
Volts
Volts
Volts
C/W
C/W
C/W
C
C
mA
nC
nF
nF
nF
ns
ns
ns
ns
ns
A
C