BSM150GB120DLC Eupec GmbH, BSM150GB120DLC Datasheet
BSM150GB120DLC
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BSM150GB120DLC Summary of contents
Page 1
... V 1200 V CES I 150 A C,nom. I 300 300 A CRM P 1,2 kW tot V +/- 20V V GES I 150 300 A FRM 2,5 kV ISOL min. typ. max 2,1 2 sat - 2 4,5 5,5 6,5 V GE(th ies res I - 0,01 0,5 mA CES - 0 400 nA GES DB_BSM150GB120DLC.xls ...
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... mWs mWs off I - 950 - sCE CC‘+EE‘ min. typ. max 1 180 - 220 - µ µ mWs rec - 10 - mWs DB_BSM150GB120DLC.xls ...
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... Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = grease terminals M6 3(8) vorläufige Daten preliminary data min. typ. max 0,1 K/W thJC - - 0,25 K 0,01 - K/W thCK 150 ° -40 - 125 ° -40 - 150 °C stg 275 2 420 g DB_BSM150GB120DLC.xls ...
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... Ausgangskennlinienfeld (typisch) Output characteristic (typical) 300 250 VGE = 17V VGE = 15V VGE = 13V VGE = 11V 200 VGE = 9V VGE = 7V 150 100 50 0 0,0 0,5 1,0 BSM150GB120DLC 15V GE 1,5 2,0 2 1,5 2,0 2,5 3,0 3,5 V [V] CE 4(8) vorläufige Daten ) CE preliminary data 3,0 3,5 4 125°C vj 4,0 4,5 5,0 DB_BSM150GB120DLC.xls ...
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... Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 300 250 200 150 100 50 0 0,0 0,5 BSM150GB120DLC 20V 25° 125° [ 25° 125°C 1,0 1,5 2,0 V [V] F 5(8) vorläufige Daten preliminary data ) 2,5 3,0 DB_BSM150GB120DLC.xls ...
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... V = 600V gon goff CE 100 150 200 I [ off V =15V , I = 150A , V = 600V , 6(8) vorläufige Daten preliminary data = rec C = 125°C j 250 300 ) , rec G = 125° DB_BSM150GB120DLC.xls ...
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... (t) thJC Zth:Diode Zth:IGBT 0 [sec 44,54 33,9 21,52 0,006 0,029 0,043 68,24 101,68 52,66 0,006 0,035 0,033 V = 15V 400 600 800 1000 V [V] CE 7(8) vorläufige Daten preliminary data 10 100 3 4 0,04 1,014 27,42 0,997 = 5,6 Ohm 125° 1200 1400 DB_BSM150GB120DLC.xls ...
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... Technische Information / Technical Information IGBT-Module BSM150GB120DLC IGBT-Modules vorläufige Daten preliminary data 8(8) DB_BSM150GB120DLC.xls ...