QM50HA-HB MITSUBISHI, QM50HA-HB Datasheet - Page 4

• Manufacturer Part Number: QM50HA-HB
• Description: 50A - transistor module for medium power switching use, insulated type
• Manufacturer: MITSUBISHI

10
10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
–1
10
FORWARD BIAS SAFE OPERATING AREA
–1
7
5
4
3
2
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2 T
0
10
1
0
10
COLLECTOR-EMITTER VOLTAGE V
2
1
0
10
–1
TRANSIENT THERMAL IMPEDANCE
0
–3
V
I
I
BASE REVERSE CURRENT –I
NON-REPETITIVE
0
CHARACTERISTIC (TRANSISTOR)
B1
C
CC
C
=50A
2
2
2
=25°C
=100mA
SWITCHING TIME VS. BASE
=300V
2 3 4 5 7
3
3
3
T
T
j
j
=25°C
=125°C
CURRENT (TYPICAL)
5
5
5
7
7
7
10
10
10
t
t
s
f
1
–2
1
TIME (s)
2
2
2
10
3
3
3
DC
0
5
5
5
7
7
7
10
10
2 3 4 5 7
10
2
–1
2
2
2
3
3
10ms
B2
500µs
1ms
100µs
(A)
5
5
CE
7
7
10
(V)
10
10
1
3
0
160
140
120
100
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
2
1
0
0.2
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
j
=125°C
100
CHARACTERISTICS) (TYPICAL)
20
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
DISSIPATION
COLLECTOR
0.6
200
40
300
60
1.0
I
–V
B2
CEO
=–3.5A
400
80
(V)
1.4
500
100 120
SECOND
BREAKDOWN
AREA
QM50HA-HB
I
B2
600
T
T
C
j
j
=–1.5A
=25°C
=125°C
1.8
INSULATED TYPE
( C)
700
140
CE
800
160
2.2
(V)
Feb.1999