QM150DY-HBK MITSUBISHI, QM150DY-HBK Datasheet - Page 3

• Manufacturer Part Number: QM150DY-HBK
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI

PERFORMANCE CURVES
10
10
500
400
300
200
100
10
–1
–2
COLLECTOR-EMITTER VOLTAGE V
0
7
5
4
3
2
7
5
4
3
2
5
4
3
2
1
0
0
10
1.8
0
COLLECTOR-EMITTER SATURATION
–2
BASE-EMITTER VOLTAGE V
T
CHARACTERISTICS (TYPICAL)
j
2
COMMON EMITTER OUTPUT
=25°C
CHARACTERISTIC (TYPICAL)
COMMON EMITTER INPUT
I
3
C
2.2
=100A
4
1
BASE CURRENT I
VOLTAGE (TYPICAL)
5
7
10
2.6
–1
2
2
I
C
=150A
3
4
5
3.0
3
7
10
B
0
(A)
I
V
T
T
T
C
2
j
CE
3.4
j
j
=25°C
=200A
=25°C
=125°C
4
BE
3
=2.5V
4
(V)
CE
5
7
(V)
3.8
10
5
1
10
10
10
10
10
10
10
10
10
–1
–1
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
4
3
2
1
0
1
0
10
10
4 5 7
SWITCHING TIME VS. COLLECTOR
COLLECTOR CURRENT (TYPICAL)
1
1
MITSUBISHI TRANSISTOR MODULES
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
2 3 4 5 7
2 3 4 5 7
DC CURRENT GAIN VS.
T
T
SATURATION VOLTAGE
10
V
V
j
j
V
=25°C
=125°C
BE(sat)
CE(sat)
CURRENT (TYPICAL)
t
t
f
on
1
CE
t
HIGH POWER SWITCHING USE
s
=2.5V
2 3 4 5 7
10
10
QM150DY-HBK
2
2
2 3 4 5 7
2 3 4 5 7
10
V
I
I
B1
B2
I
V
T
T
CC
2
B
T
T
j
j
CE
=200mA
=25°C
=125°C
=300mA
=–3A
C
C
C
INSULATED TYPE
j
j
=300V
=25°C
=125°C
=5.0V
(A)
(A)
(A)
2 3 4
10
10
3
3
Feb.1999