TC58FVM6B2AFT65 TOSHIBA Semiconductor CORPORATION, TC58FVM6B2AFT65 Datasheet
TC58FVM6B2AFT65
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TC58FVM6B2AFT65 Summary of contents
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TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words × 8 bits ...
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... Ordering information TC58 Ordering type TC58FVM6T2AFT65 TC58FVM6B2AFT65 TC58FVM6T2AXB65 TC58FVM6B2AXB65 TC58FVM6(T/B)2A(FT/XB)65 Speed version Package FT = TSOP XB = FBGA Design rule A = 0.16 µm Function/Boot block architecture/Bank ratio T2 = Page mode/Top boot block/1:3:3 Page mode/Bottom boot block/1:3:3:1 Capacity M6 = 64Mbits Supply Voltage system Device type ...
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PIN ASSIGNMENT (TOP VIEW) A15 1 A14 2 A13 3 A12 4 A11 5 A10 A19 9 A20 RESET 12 A21 13 WP /ACC A18 16 A17 ...
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BLOCK DIAGRAM /ACC Control Circuit WE BYTE RESET CE Command Register OE A0 A21 A-1 TC58FVM6(T/B)2A(FT/XB) Buffer Memory Cell Memory Cell Memory Cell Array Array Array Bank0 Bank1 Bank2 ...
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MODE SELECTION MODE CE Read/Page Read ID Read (Manufacturer Code) ID Read (Device Code) Standby Output Disable Write Block Protect 1 Block Protect 2 Verify Block Protect Temporary Block Unprotect Hardware Reset/Standby Boot Block Protect Notes ...
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COMMAND SEQUENCES BUS FIRST BUS COMMAND WRITE WRITE CYCLE SEQUENCE CYCLES Addr. REQ’D Read/Reset 1 XXXh Word 555h Read/Reset 3 Byte AAAh Word 555h ID Read 3 Byte AAAh Word 555h Auto-Program 4 Byte AAAh Word 11 555h Auto PageProgram ...
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SIMULTANEOUS READ/WRITE OPERATION The TC58FVM6T2A/B2A features a Simultaneous Read/Write operation. The Simultaneous Read/Write operation enables the device to simultaneously write data to or erase data from a bank while reading data from another bank. The TC58FVM6T2A/B2A has a total of ...
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ID Read Mode ID Read Mode is used to read the device maker code and device code. The mode is useful in that it allows EPROM programmers to identify the device type automatically. ID read can be executed in two ...
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Command Write The TC58FVM6T2A/B2A uses the standard JEDEC control commands for a single-power supply E Command Write is executed by inputting the address and data into the Command Register. The command is written by inputting a pulse to WE with ...
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Auto-Program Mode The TC58FVM6T2A/B2A can be programmed in either byte or word units. Auto-Program Mode is set using the Program command. The program address is latched on the falling edge of the WE signal and data is latched on the ...
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Program Suspend/Resume Mode Program Suspend is used to enable Data Read by suspending the Write operation. The device accepts a Program Suspend command in Write Mode (including Write operations performed during Erase Suspend) but ignores the command in other modes. ...
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Auto Block Erase/Auto Multi-Block Erase Modes The Auto Block Erase Mode and Auto Multi-Block Erase Mode are set using the Block Erase command. The block address is latched on the falling edge of the WE signal in the sixth bus ...
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BLOCK PROTECTION Block Protection is a function for disabling writing and erasing specific blocks. Block protection can be carried out in two ways: by supplying a high voltage (V voltage and a command sequence (see Block protection 2). (1) Block ...
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Hidden ROM Area The TC58FVM6T2A/B2A features a 64-Kbyte hidden ROM area which is separate from the memory cells. The area consists of one block. Data Read, Write and Protect can be performed on this block. Because Protect cannot be released, ...
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COMMON FLASH MEMORY INTERFACE (CFI) The TC58FVM6T2A/B2A conforms to the CFI specifications. To read information from the device, input the Query command followed by the address. In Word Mode DQ8~DQ15 all output 0s. To exit this mode, input the Reset ...
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ADDRESS A6~A0 DATA DQ15~DQ0 2Ch 0002h 2Dh 0007h 2Eh 0000h 2Fh 0020h 30h 0000h 31h 007Eh 32h 0000h 33h 0000h 34h 0001h 40h 0050h 41h 0052h 42h 0049h 43h 0031h 44h 0031h 45h 0000h 46h 0002h 47h 0001h 48h 0001h ...
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ADDRESS A6~A0 DATA DQ15~DQ0 57h 0004h 58h 00XXh 59h 00XXh 5Ah 00XXh 5Bh 00XXh TC58FVM6(T/B)2A(FT/XB)65 DESCRIPTION Bank Organization 00h: Data at 4Ah is zero X: Number of Banks Bank0 Region information X = Number of blocks in Bank0 TOP: 10h ...
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HARDWARE SEQUENCE FLAGS The TC58FVM6T2A/B2A has a Hardware Sequence flag which allows the device status to be determined during an auto mode operation. The output data is read out using the same timing as that used when ...
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DQ6 (Toggle bit 1) The device status can be determined by the Toggle Bit function during an Auto-Program or auto-erase operation. The Toggle bit begins toggling on the rising edge the last bus cycle. DQ6 alternately outputs ...
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DATA PROTECTION The TC58FVM6T2A/B2A includes a function which guards against malfunction or data corruption. Protection against Program/Erase Caused by Low Supply Voltage To prevent malfunction at power-on or power-down, the device will not accept commands while ...
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ABSOLUTE MAXIMUM RATINGS SYMBOL V V Supply Voltage Input Voltage IN V Input/Output Voltage DQ V Maximum Input Voltage for A9, OE and RESET IDH V Maximum Input Voltage for ACCH P Power Dissipation D T Soldering ...
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DC CHARACTERISTICS SYMBOL PARAMETER I Input Leakage Current LI I Output Leakage Current LO V Output High Voltage OH V Output Low Voltage OL V Average Random Read DD I DDO1 Current I V Average Program Current V DDO2 DD ...
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AC CHARACTERISTICS AND OPERATING CONDITIONS READ CYCLE Product name VDD voltage (V) Output load capacitance (CL) SYMBOL PARAMETER t Read Cycle Time RC t Page Read Cycle Time PRC t Address Access Time ACC t CE Access Time CE t ...
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COMMAND WRITE/PROGRAM/ERASE CYCLE SYMBOL t Command Write Cycle Time CMD Address Set-up Time/ BYTE Set-up Time tAS t Address Hold Time/ BYTE Hold Time AH t Data Set-up Time DS t Data Hold Time Low-Level Hold Time ...
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TIMING DIAGRAMS Read/ID Read Operation Address OEH D OUT ID Read Operation (apply OUT Read Mode Data invalid ...
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Page Read Operation Address(A3-21))) Address(0- OUT Hi-Z Read after command input (Only Hidden Rom/CFI Read) Last command address Address Command data D OUT TC58FVM6(T/B)2A(FT/XB) PRC RC t ACC ...
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Command Write Operation This is the timing of the Command Write Operation. The timing which is described in the following pages is essentially the same as the timing shown on this page. • WE Control Address ...
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ID Read Operation (input command sequence) Address 555h t CMD OES WE AAh OUT Read Mode (input of ID Read command sequence) (Continued) Address 555h t CMD AAh ...
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Auto-Program Operation ( WE Address 555h t CMD OES WE D AAh IN D OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program data TC58FVM6(T/B)2A(FT/XB)65 Control) 2AAh 555h PA 55h A0h ...
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Auto Page Program Operation ( Address(A3-21) 555h 2AAh Address(A0- OES WE AAh 55h OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program Data WE Control CMD ...
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Auto Chip Erase/Auto Block Erase Operation ( Address 555h t CMD OES WE D AAh IN t VDS V DD Note: Word Mode address shown. BA: Block address for Auto Block Erase operation CE Auto-Program Operation ( ...
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Auto Page Program Operation ( Address(A3-21) 555h 2AAh Address(A0- OES WE AAh 55h OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program data Control CMD ...
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Auto Chip Erase/Auto Block Erase Operation ( Address 555h t CMD OES WE D AAh IN t VDS V DD Note: Word Mode address shown. BA: Block address for Auto Block Erase operation TC58FVM6(T/B)2A(FT/XB)65 Control) CE 2AAh ...
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Program/Erase Suspend Operation BK Address B0h D IN Hi-Z D OUT Program/Erase Mode RA: Read address Program/Erase Resume Operation Address OES WE t DF1 t DF2 ...
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during Auto Program/Erase Operation Hardware Reset Operation WE RESET RESET Read after Address RESET D OUT TC58FVM6(T/B)2A(FT/XB)65 Command input sequence READY ...
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BYTE during Read Operation CE t CEBTS OE BYTE DQ0~DQ7 DQ8~DQ14 DQ15/A-1 BYTE during Write Operation CE WE BYTE TC58FVM6(T/B)2A(FT/XB)65 t BTD Data Output Data Output Data Output t ACC Data Output Address Input 2003-01-29 36/61 ...
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DATA Hardware Sequence Flag ( Last Address Command Address t CMD Last D Command IN Data DQ7 DQ0~DQ6 t BUSY PA: Program address BA: Block address Hardware Sequence Flag (Toggle bit) Address CE t ...
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Block Protect 1 Operation Address VPT VPS WE t CESP CE D OUT BA: Block address *: 01H indicates that block is protected. TC58FVM6(T/B)2A(FT/XB)65 Block ...
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Block Protect 2 Operation Address t CMD VPS RESET D 60h IN D OUT BA: Block address Address of next block *: 01h indicates that block ...
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FLOWCHARTS Auto-Program Address = Address + 1 Note: The above command sequence takes place in Word Mode. TC58FVM6(T/B)2A(FT/XB)65 Start Auto-Program Command Sequence (see below) DATA Polling or Toggle Bit No Last Address? Yes Auto-Program Completed Auto-Program Command Sequence (address/data) 555h/AAh ...
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Auto-Page Program Address = Address + 1 Program address (A2=0,A1=0,A0=0) / Program data Program address (A2=0,A1=0,A0=1) / Program data Program address (A2=0,A1=1,A0=0) / Program data Program address (A2=0,A1=1,A0=1) / Program data TC58FVM6(T/B)2A(FT/XB)65 START Auto page program command sequence ( see ...
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Fast Program Address = Address + 1 Fast Program Set Command Sequence (address/data) 555h/AAh 2AAh/55h 555h/20h TC58FVM6(T/B)2A(FT/XB)65 Start Fast Program Set Command Sequence (see below) Fast Program Command Sequence (see below) DATA Polling or Toggle Bit No Last Address? Yes ...
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Auto Erase Auto Chip Erase Command Sequence (address/data) 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Note: The above command sequence takes place in Word Mode. TC58FVM6(T/B)2A(FT/XB)65 Start Auto Erase Command Sequence (see below) DATA Polling or Toggle Bit Auto Erase Completed ...
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DQ7 DATA Polling Start Read Byte (DQ0~DQ7) Addr DQ7 = Data? No DQ5 = 1? Read Byte (DQ0~DQ7) Addr DQ7 = Data? Fail DQ6 Toggle Bit Start Read Byte (DQ0~DQ7) Addr DQ6 = Toggle? ...
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Block Protect 1 PLSCNT = 1 Set up Block Address Addr. = BPA Wait for 4 µ Wait for 4 µs Wait for 100 µs Wait for 4 µs Wait for 4 µs Verify Block ...
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Block Protect 2 RESET = V Wait for 4 µs PLSCNT = 1 Block Protect 2 Command First Bus Write Cycle (XXXH/60H) Set up Address Addr. = BPA Block Protect 2 Command Second Bus Write Cycle Wait for 100 µs ...
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BLOCK ADDRESS TABLES (1) TC58FVM6T2A (top boot block) BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA0 L L BA1 L L BA2 L L BA3 L L BA4 L L BA5 ...
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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA32 BA33 BA34 BA35 BA36 BA37 ...
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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA64 BA65 BA66 BA67 BA68 BA69 ...
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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA96 BA97 BA98 BA99 BA100 BA101 ...
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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 H BA127 H H BA128 BA129 BA130 BK3 BA131 BA132 H H ...
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TC58FVM6B2A (bottom boot block) BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA0 BA1 BA2 BA3 BA4 L L ...
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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA31 BA32 BA33 BA34 BA35 BA36 ...
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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA63 BA64 BA65 BA66 BK1 BA67 BA68 L H ...
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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA95 BA96 BA97 BA98 BA99 BA100 ...
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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA127 BA128 BA129 BA130 BK3 BA131 BA132 H H ...
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BLOCK SIZE TABLE (1) TC58FVM6T2A (top boot block) BLOCK SIZE BLOCK # BYTE MODE BYTE MODE BA0~BA15 64 Kbytes BA16~BA63 64 Kbytes BA64~BA111 64 Kbytes BA112~BA126 64 Kbytes BA127~BA134 8 Kbytes (2) TC58FVM6B2A (bottom boot block) BLOCK SIZE BLOCK # ...
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PACKAGE DIMENSIONS TC58FVM6(T/B)2A(FT/XB)65 Unit: mm 2003-01-29 58/61 ...
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PACKAGE DIMENSIONS TC58FVM6(T/B)2A(FT/XB)65 Unit: mm 2003-01-29 59/61 ...
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Revision History Date Rev. 2002-03-14 1.00 Original version P.6 Corrected bank addresses. P.15 Corrected CFI CODE (31H). 2002-06-21 1.01 P.23 Changed t P.25 Added timing diagram of read after command input. P.17 Added explanation of DATA polling in case of ...
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RESTRICTIONS ON PRODUCT USE • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...