K6R4008C1D-JC10 Samsung, K6R4008C1D-JC10 Datasheet
K6R4008C1D-JC10
Specifications of K6R4008C1D-JC10
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K6R4008C1D-JC10 Summary of contents
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... The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. ...
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... K6R4016C1D 4Mb Async. Fast SRAM Ordering Information Org. Part Number K6R4004C1D-J(K)C( K6R4004V1D-J(K)C(I) 08/10 K6R4008C1D-J(K,T,U)C(I) 10 512K x8 K6R4008V1D-J(K,T,U)C(I) 08/10 K6R4016C1D-J(K,T,U,E)C(I) 10 256K x16 K6R4016V1D-J(K,T,U,E)C(I,L,P) 08/10 PRELIMPreliminaryPPPPPPPPPINARY VDD(V) Speed ( ns ) PKG 32-SOJ K : 32-SOJ(LF) 3.3 8/ 36-SOJ K : 36-SOJ(LF 44-TSOP2 3.3 8/ 44-TSOP2(LF 44-SOJ K : 44-SOJ(LF 44-TSOP2 U: 44-TSOP2(LF) 3.3 8/ 48-TBGA - 2 - CMOS SRAM Temp. & Power ...
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... Also it allows that lower and upper byte access by data byte control(UB, LB). The device is fabri- cated using SAMSUNG s advanced CMOS process and designed for high-speed circuit technology particularly well suited for use in high-density high-speed system applications. ...
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K6R4016C1D PIN CONFIGURATION (Top View SOJ/ I TSOP2 Vcc 11 Vss 12 ...
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K6R4016C1D RECOMMENDED DC OPERATING CONDITIONS* Parameter Supply Voltage Ground Input High Voltage Input Low Voltage * The above parameters are also guaranteed at industrial temperature range (Min) = -2.0V a.c(Pulse Width 8ns) for I IL *** V (Max) ...
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K6R4016C1D AC CHARACTERISTICS (T A TEST CONDITIONS* Parameter Input Pulse Levels Input Rise and Fall Times Input and Output timing Reference Levels Output Loads * The above test conditions are also applied at industrial temperature range. Output Loads(A) D OUT ...
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K6R4016C1D WRITE CYCLE* Parameter Symbol Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write Write Pulse Width(O E High) Write Pulse Width(O E Low) t Write Recovery Time Write to Output ...
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K6R4016C1D NOTES (READ CYCLE high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address and t are defined as the time at which the ...
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K6R4016C1D TIMING WAVEFORM OF WRITE CYCLE(3) Address CS UB High-Z Data in High-Z Data out TIMING WAVEFORM OF WRITE CYCLE(4) Address CS UB High-Z Data in High-Z Data out NOTES(WRITE CYCLE) 1. All write cycle timing ...
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K6R4016C1D FUNCTIONAL DESCRIPTION means Don t Care. PRELIMPreliminaryPPPPPPPPPINARY UB Mode ...
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K6R4016C1D PACKAGE DIMENSIONS 44-SOJ-400 #44 11.18 0.12 0.440 0.005 #1 +0.10 0.43 -0.05 0.017 +0.004 0. 0.002 0.0375 44-TSOP2-400BF #44 #1 18.81 0.741 18.41 0.725 0.10 0.30 0.805 0. 0.004 0.032 0.012 0.002 PRELIMPreliminaryPPPPPPPPPINARY 28.98 ...
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K6R4016C1D PACKAGE DIMENSIONS Top View B #A1 Side View D Min 6. 8. 0. PRELIMPreliminaryPPPPPPPPPINARY ...