HY62256A Hynix Semiconductor, HY62256A Datasheet

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HY62256A

Manufacturer Part Number
HY62256A
Description
HY62256A32Kx8bit CMOS SRAM
Manufacturer
Hynix Semiconductor
Datasheet

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Data Sheet-sram/62256ald1
1 of 2
HY62256A-(I) Series
32Kx8bit CMOS SRAM
Description
The
HY62256A/HY62256A-I
is a high-speed, low
power and 32,786 x 8-bits
CMOS Static Random
Access Memory
fabricated using
Hyundai's high
performance CMOS
process technology. The
HY62256A/HY62256A-I
has a data retention mode
that guarantees data to
remain valid at the
minimum power supply
voltage of 2.0 volt. Using
the CMOS technology,
supply voltages from 2.0
to 5.5 volt has little effect
on supply current in the
data retention mode. The
HY62256A/HY62256A-I
is suitable for use in low
voltage operation and
battery back-up
application.
Features
·
·
·
·
Fully static operation and
Tri-state outputs
TTL compatible inputs
and outputs
Low power consumption
-2.0V(min.) data
retention
Standard pin
configuration
-28 pin 600 mil PDIP
-28 pin 330 mil SOP
-28 pin 8x13.4 mm
TSOP-1
(standard and reversed)
http://www.hea.com/hean2/sram/62256ald1.htm
22/10/97 12:30

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HY62256A Summary of contents

Page 1

... Data Sheet-sram/62256ald1 HY62256A-(I) Series 32Kx8bit CMOS SRAM Description Features · The HY62256A/HY62256A-I · high-speed, low power and 32,786 x 8-bits · CMOS Static Random Access Memory fabricated using · Hyundai's high performance CMOS process technology. The HY62256A/HY62256A-I has a data retention mode ...

Page 2

... Data Sheet-sram/62256ald1 Product No. HY62256A 5.0 HY62256A-I 5.0 Note Extended Temperature, Normal: Normal Temperature 2. Current value is max. SRAM Data Sheets Voltage Speed Operation (V) (ns) Current(mA) 55/70/85 50 55/70/85 50 Features | Pins | Ratings | Timing 3101 North First Street, San Jose, CA 95134 Phone: 408-232-8000 URL: http://www.hea.com/ ...

Page 3

... HYUNDAI ELECTRONICS AMERICA HY62256A-(I) Series 32Kx8bit CMOS SRAM PIN CONNECTION BLOCK DIAGRAM PIN DESCRIPTION Pin Name /CS /WE /OE A0-A14 I/O1-I/O8 Vcc Vss Chip Select Write Enable Output Enable Address Inputs Data Input/Output Power(+5.0V) Ground Features | Pins | Ratings | Timing 3101 North First Street, San Jose, CA 95134 http://www ...

Page 4

SRAM Data Sheets Phone: 408-232-8000 URL: http://www.hea.com/ | Memory Products | email: DRAMSRAMmemory@hea.com Copyright © 1997 Hyundai Electronics America. http://www.hea.com/hean2/sram/62256alp1.htm 22/10/97 12:32 ...

Page 5

... HYUNDAI ELECTRONICS AMERICA HY62256A-(I) Series 32Kx8bit CMOS SRAM ABSOLUTE MAXIMUM RATING (1) Symbol OUT STG OUT T SOLDER Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied ...

Page 6

... IL /CS 0mA / Min. Duty Cycle = 100 /CS >= Vcc- HY62256A 0.2V V <= 0. >= IN HY62256A-I V -0. 2 1mA OH = 25°C A http://www.hea.com/hean2/sram/62256ala1.htm I/O OPERATION High-Z High-Z Data Out Data In | Package | Ordering Min Typ Max Unit <= Vcc ...

Page 7

AC CHARACTERISTICS Vcc = 5V(±)10%, T specified. # Symbol READ CYCLE 1 tRC 2 tAA 3 tACS 4 tOE 5 tCLZ 6 tOLZ 7 tCHZ 8 tOHZ 9 tOH WRITE CYCLE 10 tWC 11 tCW 12 tAW 13 tAS ...

Page 8

AC TEST LOADS CAPACITANCE ° 1.0MHz A Symbol I/O Note: These parameters are sampled and not 100% tested SRAM Data Sheets Note: Including jig and scope capacitance Parameter ...

Page 9

... HYUNDAI ELECTRONICS AMERICA HY62256A-I 32K x 8bit CMOS SRAM TIMING DIAGRAM READ CYCLE 1 Note (READ CYCLE and t CHZ circuit conditions and are not referenced to output voltage levels any given temperature and voltage condition, t both for a given device and from device to device. ...

Page 10

WRITE CYCLE 2 (/OE Low Fixed) Notes (WRlTE CYCLE write occurs during the overlap of a low /CS and a low /WE. A write begins at the latest transition among /CS going low and /WE going low: ...

Page 11

... Data Retention Timing Diagram RELIABILITY SPEC. ESD LATCH-UP SRAM Data Sheets Parameter /CS >= Vcc-0.2V Vss <= V Vcc Vcc = 3.0V /CS >= Vcc HY62256A -0.2V Vss <= V HY62256A-1 <= Vcc See Data Retention Timing Diagram = 0°C to 40°C A TEST MODE >= 2000V HBM MM >= 250V <= -100mA >= 100mA Features ...

Page 12

... HYUNDAI ELECTRONICS AMERICA HY62256A-(I) Series 32Kx8bit CMOS SRAM 28pin 600mil Dual In-Line Package(P) 28pin 330mil Small Outline Package(J) 28pin 8X13.4mm Thin Small Outline Package Standard(T1 http://www.hea.com/hean2/sram/62256alpk1.htm PACKAGE INFORMATION 22/10/97 12:37 ...

Page 13

Thin Small Outline Package SReversed(R1) SRAM Data Sheets Features | Pins | Ratings | Timing 3101 North First Street, San Jose, CA 95134 Phone: 408-232-8000 URL: http://www.hea.com/ | Memory Products | email: DRAMSRAMmemory@hea.com Copyright ...

Page 14

... HYUNDAI ELECTRONICS AMERICA HY62256A-(I) Series 32Kx8bit CMOS SRAM Part No. HY62256AP HY62256ALP HY62256ALLP HY62256AJ HY62256ALJ HY62256ALLJ HY62256AT1 HY62256ALT1 HY62256ALLT1 HY62256AR1 HY62256ALR1 HY62256ALLR1 HY62256AP-I HY62256ALP-I HY62256AJ-I HY62256ALJ-I HY62256AT1-I HY62256ALT1-I HY62256AR2-I HY62256ALR2-I SRAM Data Sheets Speed Power 55/70/85 55/70/85 L-part 55/70/85 LL-part 55/70/85 55/70/85 L-part 55/70/85 LL-part 55/70/85 55/70/85 L-part ...

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