M5M51016BTP-70LL MITSUBISHI, M5M51016BTP-70LL Datasheet
M5M51016BTP-70LL
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M5M51016BTP-70LL Summary of contents
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... DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high- performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for the battery back-up application ...
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... BC2 WRITE CONTROL W 38 INPUT OUTPUT ENABLE OE 13 INPUT M5M51016BTP,RT-70L,-10L, 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM When setting BC the chips are in a non-selectable mode in which both reading and , BC , CS, W and 1 2 writing are disabled. In this mode, the output stage high-impedance state, ...
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... C I Input capacitance ( BC , IBC C Output capacitance O Note 1: Direction for current flowing into positive (no mark Typical value is Vcc = 5.0V M5M51016BTP,RT-70L,-10L, 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM Conditions With respect to GND Ta= (Ta=0 ~ Vcc=5. unless otherwise noted) C Test conditions I = – ...
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... Write recovery time rec(W) t Output disable time from W low dis(W) t Output disable time from OE high dis(OE) t en(W) Output enable time from W high t en(OE) Output enable time from OE low M5M51016BTP,RT-70L,-10L, 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM + unless otherwise noted ) 0. 1.5V OL ...
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... W = "H" level Write cycle (W control mode and/ (Note 3) CS (Note M5M51016BTP,RT-70L,-10L, 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM a( (BC1 (BC2 (CS (OE (OE (BC1 (BC2 (CS) ...
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... Note 3: Hatching indicates the state is "don't care". 4: Writing is executed while CS high overlaps BC 5: When the falling edge simultaneously or prior to the falling edge of BC maintained in the high impedance state. 6: Don't apply inverted phase signal externally when DQ pin is output mode. M5M51016BTP,RT-70L,-10L, 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM ...
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... Power down set up time su (PD) t Power down recovery time rec (PD) (3) POWER DOWN CHARACTERISTICS BC control mode V CC 2.2V BC & control mode 0.2V M5M51016BTP,RT-70L,-10L, 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM o ( unless otherwise noted) Test conditions < 2.2V V CC(PD) 2 < < 2.0V V 2.2V CC(PD) < ...